Other

Noriaki Sakamoto

Kiyoshi Nakai

Yukihide Suzuki

Sadayuki Morita

Hidekazu Egawa

Isamu Fujii

Katura Abe

A plurality of unit areas having one to a plurality of MOSFETs for implementing specific logic circuits are placed in a first direction. A first interconnection extending in the first direction is formed over each unit area. A second interconnection extending in the first direction is formed along the plurality of unit areas and outside the unit areas. Wiring dedicated areas provided with a third interconnection extending in a second direction intersecting the first direction are respectively provided between the adjacent unit areas. A logic circuit formed in each unit area has both a first connection form connected to the first interconnection and a second connection form connected to the third interconnection, via the second interconnection, according to combinations with the wiring dedicated areas adjacent thereto, as needed.

Semiconductor device with plural unit regions in which one or more MOSFETs are formed

A plurality of unit areas having one to a plurality of MOSFETs for implementing specific logic circuits are placed in a first direction. A first interconnection extending in the first direction is formed over each unit area. A second interconnection extending in the first direction is formed along the plurality of unit areas and outside the unit areas. Wiring dedicated areas provided with a third interconnection extending in a second direction intersecting the first direction are respectively provided between the adjacent unit areas. A logic circuit formed in each unit area has both a first connection form connected to the first interconnection and a second connection form connected to the third interconnection via the second interconnection according to combinations with the wiring dedicated areas adjacent thereto as needed.

Semiconductor integrated circuit device

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Higashimurayama, Japan

Noriaki Sakamoto