Canon Kabushiki Kaisha

Noriaki Ohguri

Kazuo Kuroda

Hiroshi Takagi

Yoshimasa Okamura

Tetsuya Kaneko

Mitsutoshi Hasegawa

Yoshihiro Yanagisawa

Miki Tamura

Osamu Takamatsu

Kazuhiro Sando

Toru Sugeno

Takeo Tsukamoto

Hideaki Mitsutake

Masahiro Fushimi

Yoshio Suzuki

Toshifumi Yoshioka

Takao Kusaka

Yoichi Ohsato

Toshihiko Ouchi

Masayoshi Sekine

Minoru Yoshii

Yoichi Osato

Hajime Sakata

Mamoru Uchida

Masanobu Hasegawa

Seiji Mishima

Hiromitsu Takase

Yoko Kosaka

To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

Electronic device, electron source and manufacturing method for electronic device

Electron source structure covered with resistance film

The present invention discloses a film comprising at least a compound of germanium as a film structure capable of suppressing influence of electrification. It also discloses an electron beam system, particularly an image forming system, using a member having the film comprising at least a compound of germanium. It further discloses a manufacturing method of the image forming system.

Electrification moderating film, electron beam system, image forming system, member with the electrification moderating film, and manufacturing method of image forming system

The image forming apparatus comprises an electron source having a substrate on which a plurality of electron emitting devices are arranged, a face plate provided with fluorescent substances for emitting light of different colors and serving to form a color image upon irradiation of electrons by the electron emitting devices. Rectangular spacers are arrange between the substrate and the face plate and are fixed to the face plate and contacted to the substrate via soft members.

Image forming apparatus and method of manufacturing the same

Image forming apparatus having spacers joined with a soft member and method of manufacturing the same

An electron beam apparatus includes an electron source and a radiative member on which electrons emitted from the electron source are radiated. In addition, a member is provided between the electron source and the radiative member, with the member having an electroconductive first member and a second member formed on the first member to partially exposed the first member.

Charge-up suppressing member, charge-up suppressing film, electron beam apparatus, and image forming apparatus

A charge-reducing film is used for coating a surface within a vacuum container containing electron-emitting devices to prevent deviations of electron beams caused by electric charges of the furface. The charge-reducing film comprises a nitrogen compound containing one or more than one transition metals and at least one element selected from aluminum, silicon and boron. An oxide layer may be arranged on the charge-reducing layer.

Charge-reducing film, image forming apparatus including said film and method of manufacturing said image forming apparatus

An image forming apparatus, according to the present invention, comprises a first substrate whereon are provided a functional element and electric wiring that is connected to the functional element, and a second substrate whereon is an area where an image is to be formed, and wherein, with the first substrate and the second substrate being located opposite to each other, space between the first substrate and the second substrate is kept in a pressure-reduced state so as to form an image in the area on the second substrate, and wherein the electric wiring is formed of a laminated conductive material by a process that plates a printed pattern, which is initially deposited by a printing process.

Image forming apparatus and a method for manufacturing the same

An electron beam apparatus having a first substrate having an electron emitting portion, a second substrate facing the first substrate, and a component provided between the first and second substrates, wherein carbon nitride is formed at least on the surface of the component to suppress charges on the component or suppress a change in the charge amount to thereby suppress a beam orbit from being shifted from a desired orbit.

Electron beam apparatus, image forming apparatus using the same, components for electron beam apparatus, and methods of manufacturing these apparatuses and components

An image forming apparatus, according to the present invention, includes a first substrate whereon are provided a functional element and electric wiring that is connected to the functional element, and a second substrate whereon is an area where an image is to be formed, and wherein, with the first substrate and the second substrate being located opposite to each other, space between the first substrate and the second substrate is kept in a pressure-reduced state so as to form an image in the area on the second substrate, and wherein the electric wiring is formed of a laminated conductive material by a process that plates a printed pattern, which is initially deposited by a printing process.

An improved compound semiconductor device, such as a distributed Bragg reflection type or distributed feedback type laser device, having regions with and regions without a diffraction grating. The device is fabricated without exhibiting surface irregularities by growing a first epitaxial layer on a semiconductor substrate, forming a fine uneven structure on the surface of the first epitaxial layer and growing a second epitaxial layer on the fine uneven structure. The fine uneven structure has a surface shape which exposes crystal orientations that facilitate subsequent epitaxial growth. In one embodiment, portions of the fine uneven structure are formed as a diffraction grating while other portions are formed insufficiently uneven to have a diffraction effect for any usable light wavelength. The fine uneven structure may suitably be shallow, have a short pitch or be provided at a slant to the light propagation direction, in order to preclude a diffraction effect.

Compound semiconductor device and fabrication method of producing the

An apparatus for detecting a displacement of an object comprises a light source element for emitting a detection light beam, a reflection member for reflecting the detection light beam from the light source element, the detection light beam being irradiated to the object by the reflection by the reflection member, a photo-sensing element for sensing the detection light beam reflected from the object by a photo-sensing plane thereof to detect an incident position of the detection light beam on the photo-sensing plane, displacement information of the object being determined in accordance with the detection by the photo-sensing element, and a substrate having the light source element, the reflection member and the photo-sensing element arranged thereon.

Displacement detection apparatus

A phase-shifted diffraction grating for devices such as semiconductor lasers is produced by forming a first diffraction grating pattern of a first material having a reference pitch on a substrate. The substrate is then coated with a second material on both the first material and an exposed portion of the substrate in a region where a second diffraction grating having a pitch which is the reverse of the reference pitch of the first diffraction grating pattern is to be formed. The first material is removed by lift off to obtain the second diffraction grating pattern on the second diffraction grating region. The substrate is etched using the first diffraction grating as an etching mask to form the first diffraction grating and then the substrate is etched with the second diffraction grating pattern as an etching mask to obtain a second diffraction grating continuous with the first diffraction grating. The first diffraction grating pattern may have a rectangular or square shape to stably and accurately remove the first material by lift-off and the boundary between the first and second diffraction gratings can be stably and accurately defined by self-alignment.

Growing community of inventors

Zama, Japan

Noriaki Ohguri