Nuflare Technology, Inc.

Kabushiki Kaisha Toshiba

Toshiba Machine Co., Ltd.

Noriaki Nakayamada

Kenichi Yasui

Yasuo Kato

Mizuna Suganuma

Shigehiro Hara

Haruyuki Nomura

Seiji Wake

Hideo Inoue

Akihito Anpo

Takayuki Abe

Munehiro Ogasawara

Takashi Saito

Hideo Tsuchiya

Toru Tojo

Takashi Kamikubo

Jun Yashima

Ryoichi Hirano

Tomohiro Iijima

Hironobu Matsumoto

Junichi Suzuki

Shinji Sakamoto

Hirohito Anze

Hiroshi Yamashita

Tomoyuki Horiuchi

Susumu Oogi

Saori Gomi

Takeshi Kurohori

Yoshiaki Hattori

Makoto Hiramoto

Takao Tamura

Mitsuko Shimizu

Satoshi Imura

In a charged particle beam writing method according to an embodiment, a charged particle beam is deflected by a deflector, and a pattern is written by irradiating, with the charged particle beam, a substrate having a resist film formed thereon. The method includes irradiating a pattern region, in which a pattern is to be formed, with a beam at a first dose, irradiating at least part of a non-pattern region, in which a pattern is not to be formed, with the charged particle beam at a second dose, at which the resist film is not dissolved away, and determining the second dose based on the first dose and a charge amount of the resist film corresponding to a pattern density of the pattern region, wherein a charge amount difference between the pattern region and a non-dissolution irradiation region, which is irradiated at the second dose, is smaller than that obtained when the second dose is zero.

Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

Position shifts caused by charging phenomena can be corrected with high accuracy. A charged particle beam writing apparatus includes an exposure-amount distribution calculator calculating an exposure amount distribution of a charged particle beam using a pattern density distribution and a dose distribution, a fogging charged particle amount distribution calculator calculating a plurality of fogging charged particle amount distributions by convoluting each of a plurality of distribution functions for fogging charged particles with the exposure amount distribution, a charge-amount distribution calculator calculating a charge amount distribution due to direct charge using the pattern density distribution, the dose distribution, and the exposure amount distribution, and calculating a plurality of charge amount distributions due to fogging charge using the plurality of fogging charged particle amount distributions, a position shift amount calculator calculating a position shift amount of a writing position based on the charge amount distribution due to direct charge and the plurality of charge amount distributions due to fogging charge, a corrector correcting an exposure position using the position shift amount, and a writer exposing the corrected exposure position to a charged particle beam.

Charged particle beam writing apparatus, charged particle beam writing method, and a non-transitory computer-readable storage medium

In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

In one embodiment, a writing data generating method is for generating writing data used in a multi charged particle beam writing apparatus. The method includes calculating, for a figure containing a curve and a straight line included in design data, a plurality of control points representing the curve and a plurality of vertices of the curve and straight line, and expressing a position of each of the control points and vertices as a displacement from an adjacent control point or vertex to generate the writing data.

Writing data generating method and multi charged particle beam writing apparatus

According to the present invention, writing data capable of suppressing a data amount and a calculation amount in a multi charged particle beam writing apparatus is generated from design data including a figure having a curve. The present embodiment relates to a writing data generating method for generating writing data used in a multi charged particle beam writing apparatus. The method includes calculating a pair of curves each representing a curve portion of a figure included in design data, the curves each being defined by a plurality of control points, and generating the writing data by expressing a position of a second control point adjacent in a traveling direction of the curve to a first control point of the plurality of control points as a displacement from the first control point in the traveling direction of the curve and a displacement from the first control point in a direction orthogonal to the traveling direction.

Writing data generating method, multi charged particle beam writing apparatus, pattern inspecting apparatus, and computer-readable recording medium

A writing data generating method for generating writing data used in a multi charged particle beam writing apparatus, that can suppress a data amount and a calculation amount in a multi charged particle beam writing apparatus generated from design data including a figure having a curve. The method includes calculating a pair of curves each representing a curve portion of a figure included in design data, the curves each being defined by a plurality of control points, and generating the writing data by expressing a position of a second control point adjacent in a traveling direction of the curve to a first control point of the plurality of control points as a displacement from the first control point in the traveling direction of the curve and a displacement from the first control point in a direction orthogonal to the traveling direction.

An electron beam irradiation method includes calculating a charge amount distribution in the case where a substrate is irradiated with an electron beam, by using an index indicating complexity of a pattern to be formed on the substrate, calculating a positional deviation amount of an irradiation pattern to be formed due to irradiation with the electron beam, by using the charge amount distribution having been calculated, correcting an irradiation position by using the positional deviation amount having been calculated, and applying an electron beam to the irradiation position having been corrected.

Electron beam irradiation method, electron beam irradiation apparatus, and computer readable non-transitory storage medium

A drawing data generating method according to an embodiment is a method for generating drawing data input to a drawing apparatus that draws a plurality of figure patterns on an object using a charged particle beam. The method includes generating the drawing data in accordance with a data format that not only defines a plurality of pieces of figure information, but also sequentially defines dose information of each figure before or after the plurality of pieces of figure information. The dose information of each of the second and succeeding figures is converted to a representation based on the dose information of any preceding figure, and a data length of the dose information is made variable for each figure. For example, the dose information of each of the second and succeeding figures is converted to a difference representation between a dose of the figure and a dose of the preceding figure, and a data length of the difference representation is changed in accordance with the magnitude of a difference value.

Drawing data generating method

According to one aspect of the present invention, a charged particle beam apparatus includes fogging charged particle amount distribution operation processing circuitry that operates a fogging charged particle amount distribution by performing convolution integration of a distribution function in which a design distribution center of fogging charged particles is shifted and a exposure intensity distribution in which a design irradiation center of a charged particle beam is not shifted; positional displacement operation processing circuitry that operates a positional displacement based on the fogging charged particle amount distribution; correction processing circuitry that corrects an irradiation position using the positional displacement; and a charged particle beam column including an emission source that emits the charged particle beam and a deflector that deflects the charged particle beam to irradiate a corrected irradiation position with the charged particle beam.

Charged particle beam apparatus and positional displacement correcting method of charged particle beam

According to one aspect of the present invention, an electron beam apparatus includes charge amount distribution operation processing circuitry that operates a charge amount distribution of an irradiation region in a case that a substrate is irradiated with an electron beam using a combined function combining a first exponential function having an inflection point and at least one of a first-order proportional function and a second exponential function that converges and depending on a pattern area density; positional displacement operation processing circuitry that operates a positional displacement of an irradiation pattern formed due to irradiation of the electron beam using the charge amount distribution obtained; correction processing circuitry that corrects an irradiation position using the positional displacement; and an electron beam column including an emission source that emits the electron beam and a deflector that deflects the electron beam to irradiate a corrected irradiation position with the electron beam.

Electron beam apparatus and positional displacement correcting method of electron beam

A charged particle beam lithography apparatus according to an embodiment includes: a pattern-writing-data data storage processing circuitry configured to store pattern writing data in association with pattern attribute information; a shot dividing processing circuitry configured to divide the pattern writing data into shot data in association with the pattern attribute information; an indicator data storage processing circuitry configured to store an indicator for determining correction section regions to be merged on calculation in an approximation calculation of heat transfers, the indicator being associated with the pattern attribute information; a pattern writing schedule creator configured to create a pattern writing schedule based on the shot data; an approximation-calculation-method determining processing circuitry configured to determine an approximation calculation method of the heat transfers from other shots written before a shot to be written, the shot being associated with the shot data to be written, based on the pattern writing schedule and the indicator; a thermal diffusion calculator configured to calculate a temperature rise amount caused by the heat transfers from the other shots written before the shot to be written, the shot being associated with the shot data to be written, based on the approximation calculation method; a shot temperature calculator configured to calculate a representative temperature of the shot to be written with the shot data, based on the temperature rise amount; a dose modulator configured to modulate a dose of the shot to be written with the shot data, based on the representative temperature; and a lithography mechanism including a charged particle beam source, a deflector, and a stage on which the target object is placed, and to perform writing based on a modulated dose and the pattern writing schedule.

Charged particle beam lithography apparatus and charged particle beam lithography method

A charged particle beam writing method includes acquiring a pair of a reference dose and a backscatter coefficient for proximity effect correction using a first settling time, acquiring a first relation between a temperature rise amount and a critical dimension variation amount using a second settling time shorter than the first settling time, the backscatter coefficient and the reference dose acquired, calculating a temperature correction parameter depending on a temperature rise amount, for correcting a dose, by using the first relation, and a second relation on a dose and a pattern critical dimension in a case of using the first settling time, calculating a beam irradiation dose by the reference dose and a dose coefficient obtained from the backscatter coefficient of the pair acquired, and the temperature correction parameter, and writing a pattern with a beam based on the dose calculated using the second settling time.

Charged particle beam writing method, and charged particle beam writing apparatus

In one embodiment, a charged particle beam drawing apparatus includes a drawing unit that draws a pattern in a drawing area on a substrate and a control processing circuitry that controls the drawing unit via a process including receiving drawing data with a hierarchical correction map input to the control processing circuitry. The drawing data with the hierarchical map includes a plurality of files in which division maps are respectively described in files in units of subframes. Each division map includes dose correction information associated with corresponding one of blocks of the drawing area. The process further includes generating shot data by performing a data conversion process on the drawing data, reading a division map corresponding to a block in the area to be drawn from the hierarchical correction map, calculating a dose, and controlling the drawing unit based on the shot data and the calculated dose.

Charged particle beam drawing apparatus and drawing data generation method

A charged particle beam writing apparatus includes a correction term calculation processing circuitry to calculate a correction term which corrects an error of a proximity effect density of a figure pattern to be written, compared against the figure pattern at design stage, a proximity effect correction dose coefficient calculation processing circuitry to calculate a proximity effect correction dose coefficient for correcting a proximity effect, by using the correction term, a dose calculation processing circuitry to calculate a dose of a charged particle beam by using the proximity effect correction dose coefficient, and a writing mechanism to write the figure pattern on a target object by using the charged particle beam whose dose is the dose calculated.

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Kamakura, Japan

Noriaki Nakayamada