Micron Technology Incorporated

Noriaki Fujiki

Keizo Kawakita

Shigeru Sugioka

Hidenori Yamaguchi

Raj K Bansal

Takahisa Ishino

According to one or more embodiments, a method of manufacturing a semiconductor device including a plurality of main circuit regions arranged in a matrix and a scribe region provided between the main circuit regions is provided. The method includes: forming a first insulating film; forming a low-k film; forming a plurality of penetrating portions penetrating through the low-k film; and forming a second insulating film under low-coverage film-forming conditions to form cavities in the plurality of through-holes.

Semiconductor device and method of forming the same

A semiconductor device includes a semiconductor substrate; a first insulating film and a second insulating film provided above the semiconductor substrate; a low-k film provided between the first insulating film and the second insulating film; an element formation region in which elements included in an electric circuit are formed in the semiconductor substrate; a scribe region provided around the element formation region; a cut portion provided on the outer periphery of the scribe region; and a groove formed between the cut portion and the element formation region, wherein the groove penetrates through the low-k film.

An apparatus comprising a multilevel wiring structure comprising aluminum interconnections. The aluminum interconnections comprise a first portion, a second portion, and a third portion, where the second portion is between the first portion and the third portion. The third portion comprises a greater width in a lateral direction than a width in the lateral direction of the second portion. A memory device comprising a memory array comprising memory cells and a control logic component electrically connected to the memory array. At least one of the memory cells comprises a multilevel wiring structure comprising interconnect structures, where the interconnect structures comprise a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion. The third portion comprises a greater width in a lateral direction than a width in the lateral direction of the second portion. Related apparatus, memory devices, and methods are also disclosed.

Apparatus comprising aluminum interconnections, memory devices comprising interconnections, and related methods

A semiconductor device includes a main circuit region; and a scribe region surrounding the main circuit region; wherein the main circuit region and the scribe region comprises first and second insulating films and a low-k film formed therebetween; and wherein the low-k film of the scribe region includes a plurality of cavities lining along a border between the main circuit region and the scribe region.

Growing community of inventors

Kawanishi, Japan

Noriaki Fujiki