Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi, Ltd.

Toppan Printing Co., Ltd.

Noriaki Arai

Yoichi Ose

Hiroyasu Shichi

Tomihiro Hashizume

Keigo Kasuya

Makoto Ezumi

Norihide Saho

Toshiaki Kusunoki

Shinichi Matsubara

Hideo Todokoro

Mitsugu Sato

Takashi Doi

Takashi Ohshima

Yusuke Sakai

Yoshimi Kawanami

Hidetoshi Morokuma

Tohru Ishitani

Naomasa Suzuki

Fumihiro Sasajima

Masahiro Yamaoka

Toshiro Kubo

Maki Tanaka

Hideyuki Kazumi

Atsushi Miyamoto

Hiroyuki Tanaka

Hiroyuki Muto

Yoichi Makino

Hiroyasu Kaga

Ritsuo Fukaya

Yoshihiro Kimura

Zhigang Wang

Soichiro Matsunaga

Hidetoshi Sato

Masahiro Fukuta

Katsumi Setoguchi

Hironori Moritani

Minoru Kaneda

Takumi Hirase

Hiromitsu Seino

Hiroyuki Noji

In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion () configured to emit an electron when an electric field is generated; a shank () that supports the protrusion () and has a diameter decreasing toward the protrusion (); and a body () that supports the shank (), in which the protrusion (), the shank (), and the body () are each made of a hexaboride single crystal, and a part including the shank () and the body () excluding the protrusion () is covered with a material having a work function higher than that of the hexaboride single crystal.

Electron source, electron beam device, and method for manufacturing electron source

An electron guncapable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEMare provided. The electron gunis equipped with: a charged particle source; an extraction electrodefor extracting charged particles from the charged particle sourceand allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structuredisposed in contact with the extraction electrode. The length-measuring SEMis equipped with the electron gunand a computer systemfor controlling the electron gun

Charged particle gun and charged particle beam system

The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a <100> axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.

Electron source, method of manufacturing the same, and electron beam apparatus using the same

The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

Electron source, method for manufacturing the same, and electron beam device using the same

The present invention relates to a method for applying a principle of Deterministic Lateral Displacement (DLD), and for separating cells depending on the particle sizes on the basis of the DLD principle after capturing targeted cells or untargeted cells on a carrier and thereby increasing particle sizes.

Method for separating cells, and device therefor

An electron source that can be used stably for a long time even when hexaboride is used, and an electron beam device using the electron source are provided. The invention is directed to an electron source which includes a filament made of a metal, a metal tube that is fixed to the filament and has a plurality of recesses disposed at least in two axial directions so as to surround a central axis at an outer periphery, and a columnar hexaboride tip that emits an electron, is disposed so as to protrude from the inside of the metal tube to a side opposite to the filament, and is in contact with a bottom of each of the plurality of recesses of the metal tube.

Electron source and electron beam device using the same

In order to provide a stable hexaboride single-crystal field emission electron source capable of heat-flashing, this field emission electron source is provided with a metal filament, a metal tube joined thereto, a hexaboride tip that emits electrons, and graphite sheets that are independent of the metal tube and the hexaboride tip. The hexaboride tip is arranged so as not to be in structural contact with the metal tube due to the graphite sheets. The hexaboride tip, the graphite sheets, and the metal tube are configured so as to be mechanically and electrically in contact with one another.

Field emission electron source, method for manufacturing same, and electron beam device

An electron beam apparatus which can stably achieve high spatial resolution also during low acceleration observation using CeBfor the CFE electron source is provided. In an electron beam apparatus having a CFE electron source, the emitter of the electron beam of the CFE electron source is Ce hexaboride or a hexaboride of a lanthanoid metal heavier than Ce, the hexaboride emits the electron beam from the {310} plane, and the number of the atoms of the lanthanoid metal on the {310} plane is larger than the number of boron molecules comprising six boron atoms on the {310} plane.

Electron beam apparatus

Provided is a charged particle beam microscope which has a small mechanical vibration amplitude of a distal end of an emitter tip, is capable of obtaining an ultra-high resolution sample observation image and removing shaking or the like of the sample observation image. A gas field ion source includes: an emitter tip configured to generate ions; an emitter-base mount configured to support the emitter tip; a mechanism configured to heat the emitter tip; an extraction electrode installed to face the emitter tip; and a mechanism configured to supply a gas to the vicinity of the emitter tip, wherein the emitter tip heating mechanism is a mechanism of heating the emitter tip by electrically conducting a filament connecting at least two terminals, the terminals are connected by a V-shaped filament, an angle of the V shape is an obtuse angle, and the emitter tip is connected to a substantial center of the filament.

Ion source and ion beam device using same

An ion beam device according to the present invention includes a gas field ion source () including an emitter tip () supported by an emitter base mount (), a ionization chamber () including an extraction electrode () and being configured to surround the emitter tip (), and a gas supply tube (). A center axis line of the extraction electrode () overlaps or is parallel to a center axis line (A) of the ion irradiation light system, and a center axis line () passing the emitter tip () and the emitter base mount () is inclinable with respect to a center axis line of the ionization chamber (). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

Ion beam device

To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.

Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same

A charged particle beam apparatus including a charged particle emission gun with which cleaning of a tip is possible without stopping the operation of the charged particle emission gun for a long time and without heating the tip. The charged particle emission gun includes a cleaning photo-irradiation apparatus that generates ultraviolet light or infrared light to irradiate a tip, and an optical fiber for guiding the ultraviolet light or the infrared light toward the tip. The cleaning photo-irradiation apparatus generates ultraviolet light or an infrared light with a predetermined wavelength and intensity to desorb a molecule adsorbed on the tip through photon stimulated desorption, or to desorb a molecule adsorbed on the tip through photon stimulated desorption and ionize the desorbed molecule.

Charged particle beam apparatus with cleaning photo-irradiation apparatus

An object of the invention is to reduce the beam drift in which the orbit of the charged particle beam is deflected by a potential gradient generated by a nonuniform sample surface potential on a charged-particle-beam irradiation area surface, the nonuniform sample surface potential being generated by electrification made when observing an insulating-substance sample using a charged particle beam. Energy of the charged particle beam to be irradiated onto the sample is set so that generation efficiency of secondary electrons generated from the sample becomes equal to 1 or more. A flat-plate electrode () is located in such a manner as to be directly opposed to the sample. Here, the flat-plate electrode is an electrode to which a voltage can be applied independently, and which is equipped with a hole through which a primary charged particle beam can pass. Furthermore, a voltage can be applied independently to a sample stage () on which the sample is mounted. Here, the sample stage's surface directly opposed to the sample is formed into a planarized structure with no projections and depressions thereon. Also, diameter D of the hole provided in the flat-plate electrode () and distance L between the flat-plate electrode () and the sample are set such that a relation of D/L&#x2266;1.5 is satisfied.

Scanning electron microscope

Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip () for generating ions; an emitter base mount () for supporting the emitter tip; an ionizing chamber which has an extraction electrode () opposed to the emitter tip and which is configured so as to surround the emitter tip (); and a gas supply tube () for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

Growing community of inventors

Hitachinaka, Japan

Noriaki Arai