Asml Netherlands B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Carl Zeiss Smt Gmbh

Norbertus Benedictus Koster

Bastiaan Matthias Mertens

Hans Meiling

Willem Van Schaik

Vadim Yevgenyevich Banine

Martinus Hendrikus Antonius Leenders

Johannes Hubertus Josephina Moors

Konstantin Nikolaevitch Koshelev

Fokko Pieter Wieringa

Bart Dinand Paarhuis

Richard Versluis

Michel Riepen

Dirk Heinrich Ehm

Freddy Roozeboom

Erwin John Van Zwet

Bastiaan Theodoor Wolschrijn

Antonius Theodorus Wilhelmus Kempen

Adrianus Johannes Petrus Maria Vermeer

Martin Frans Pierre Smeets

Diederik Jan Maas

Thomas Stein

Evert Nieuwkoop

Hubert Adriaan Van Mierlo

Paulus Willibrordus George Poodt

Vladimir Vital'Evitch Ivanov

Michiel Nienoord

Arnoldus Jan Storm

Gerardus Johan Jozef Winands

Antonie Ellert Duisterwinkel

Annemieke Van De Runstraat

Vladimir Vital′evitch Ivanov

Erik Roelo Loopstra

Roland Van Vliet

Peter J Oprel

Frits G H M Gubbels

Esther L J Van Soest-Vercammen

A G Ton M Bastein

Marco G H Meijerink

Kemal Agovic

René Koops

Adriaan Marinus Lankhorst

Michel Van Putten

A radiation sensor device is disclosed for use with a radiation source, capable of emitting radiation with photon energies larger than the work function of the target comprising a target plate to be impacted by the radiation to generate photo-electrons, the target plate being electrically isolated from a shielding electrode. The shielding electrode is arranged to collect energy-filtered photo-electrons from the target plate, using an electrostatic barrier for the filtering. The target plate is constructed of a carbon material. A current measurement device is operative to keep the target plate at a preset voltage difference with respect to the shielding electrode and measure a photo-electron deficit current as a result of radiation impact on the target plate.

Radiation sensor device for high energy photons

The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Apparatus and method for reactive ion etching

The invention relates to a plasma generator () for cleaning an object. The plasma generator () comprises a plasma chamber () and a support structure () arranged in the plasma chamber for supporting the object () to be cleaned. Further, the plasma generator comprises an electromagnetic shield () counteracting a flow of charged plasma particles flowing from a plasma generating region towards the object, and a plasma source (). In addition, the plasma generator comprises an additional plasma source () to form a composition of plasma sources that are arranged to generate in the plasma generating region plasmas, respectively, that mutually interact during operation of the plasma generator so as to force plasma particles to flow in a diffusely closed flow path.

Plasma generator and method for cleaning an object

The invention relates to anion gauge for determining a total integrated concentration of a substance having a molecular weight falling into a pre-determined range of molecular weights in a gas sample. The anion gauge includes an ionization region in a vicinity of the ionization source; an accelerator for generating a flow of ionized molecules; a mass filter for intercepting the flow for separating ions having the molecular weight falling into the pre-determined range from the ionized molecules and a detector for generating a signal representative of the total integrated concentration of such ions present in the gas sample. The invention further relates to a lithographic apparatus and a method for determining a total integrated concentration of a substance having a molecular weight falling into a pre-determined range of molecular weights in a gas sample.

Ion gauge, a monitoring system and a method for determining a total integrated concentration of substances having specific molecular weight in a gas sample

The invention relates to a method of cleaning and/or sterilization of an object provided in a hermetically sealed enclosure, providing a pressure difference between an internal volume of the enclosure and surroundings and generating a plasma solely inside the enclosure for said cleaning and/or sterilization of the object. The invention further relates to an apparatus for enabling the same. The apparatuscomprises a vacuum chamber, which can be evacuated using a vacuum pump, and a sourcearranged to generate plasma of a suitable gas in an enclosure, which is substantially hermetically closed with respect to the atmosphere of the vacuum chamber. The enclosuremay be of a flexible type or may be manufactured from a rigid material. In case when the enclosure is rigid the pressure inside the enclosure may be lower than an outside pressure.

Method and an apparatus for cleaning and/or sterilization of an object provided in a sealed enclosure

A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H-containing or H-atom containing gas. The enclosure may further contain a hydrogen getter, such as a magnet-surface modifying gas, or a non-hydrogen containing gas. A non-hydrogen containing gas flow may be provided or a non-hydrogen getter gas flow may be provided through at least part of the protective enclosure.

Lithographic apparatus comprising a magnet, method for the protection of a magnet in a lithographic apparatus and device manufacturing method

A gas analyzing system is disclosed, the system including a gas analyzer and a reduced pressure chamber in which interior the gas analyzer is arranged, the reduced pressure chamber having an inlet configuration for a gas mixture inflow and an outlet configuration for a gas mixture outflow, wherein the outlet configuration during operation is connected to a pump system to facilitate the gas mixture outflow, the outlet configuration having a channel section and a flow section, the flow section having a cross-sectional area that is smaller than the cross -sectional area of the channel section.

Gas analyzing system, lithographic apparatus and method of improving a sensitivity of a gas analyzing system

An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30&#xb0; C. or more, preferably of approximately 100&#xb0; C. or more, particularly preferably of approximately 150&#xb0; C. or more, and even more preferably of approximately 250&#xb0; C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

Optical arrangement and EUV lithography device with at least one heated optical element, operating methods, and methods for cleaning as well as for providing an optical element

A gas analyzing system is disclosed, the system including a gas analyzer and a reduced pressure chamber in which interior the gas analyzer is arranged, the reduced pressure chamber having an inlet configuration for a gas mixture inflow and an outlet configuration for a gas mixture outflow, wherein the outlet configuration during operation is connected to a pump system to facilitate the gas mixture outflow, the outlet configuration having a channel section and a flow section, the flow section having a cross-sectional area that is smaller than the cross-sectional area of the channel section.

In-situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of molecular oxygen. Generally, the space will be purged with an ozoneless purge gas which contains a small amount of molecular oxygen in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of molecular oxygen into the space.

Lithographic projection apparatus, device manufacturing method and device manufactured thereby

Contaminant particles travelling with a projection beam in a lithographic projection apparatus are ionized. A purge gas may be attracted towards getter plates provided upstream of the purge gas supply. A magnetic field traps electrons generated by the ionizer to improve the ionization of the purge gas. The contaminant particles can be ionized by generating a plasma in a tube having a greater length than width.

Lithographic projection apparatus, device manufacturing method, and device manufacturing thereby

Cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space will be purged with an ozone-less purge gas which contains a small amount of the oxygen-containing species in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of the oxygen-containing species into the space.

Lithographic projection apparatus, device manufacturing method, device manufactured thereby, cleaning unit and method of cleaning contaminated objects

Lithographic projection apparatus, device manufacturing method, and device manufactured thereby

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Delft, Netherlands

Norbertus Benedictus Koster