Carl Zeiss Smt Gmbh

Carl-zeiss-smt Ag

Norbert Wabra

Boris Bittner

Sonja Schneider

Ricarda Schoemer

Toralf Gruner

Martin Von Hodenberg

Ulrich Loering

Wilhelm Ulrich

Daniel Kraehmer

Vladan Blahnik

Hendrik Wagner

Robert Eder

Alexander Epple

Susanne Beder

Bernhard Kneer

Walter Pauls

Holger Schmidt

Rumen Iliew

Wolfgang Singer

Karl-Heinz Schuster

Jens Kugler

Heiko Feldmann

Ulrich Wegmann

Bernhard Geuppert

Sascha Bleidistel

Franz Sorg

Helmut Beierl

Jochen Weber

Albrecht Ehrmann

Olaf Rogalsky

Rainer Hoch

Baerbel Schwaer

Joerg Mallmann

Johannes Ruoff

Thomas Schicketanz

Christian Wald

Daniel Golde

Thomas Okon

Volker Graeschus

Stephan Andre

Reimar Finken

Peter Graf

Ricarda Schneider

Ari Kazi

Guenter Rudolph

Hartmut Enkisch

Olaf Conradi

Alexander Wolf

Stephan Muellender

Johannes Zellner

Hans-Jochen Paul

Arif Kazi

Steffen Fritzsche

Bryce Anton Moffat

Andreas Dorsel

Matthias Roesch

Alexander Gratzke

Stefan Rist

Florian Ahles

Ruediger Mack

Judith Fingerhuth

Stephan Müllender

Johannes Kimling

Stephan André

Ferdinand Djuric-Rissner

Arne Schob

Ricarda SCHÖMER

An optical element for a lithography system comprises an optical surface and a photoresistor having an electric photoresistor value that varies according to an amount of light incident on a region of the optical surface.

Optical element, optical system, lithography system, and method for operating an optical element

The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (λ) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Optical element having a coating for influencing heating radiation and optical arrangement

A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

Projection exposure system for semiconductor lithography having an optical arrangement

The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (&#x3bb;) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength &#x3bb; from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography

An optical arrangement includes an optical element () and a thermal manipulation device. The optical element has a substrate (), a coating () applied to the substrate (), and an antireflection coating (). The coating () includes: a reflective multi-layer coating () configured to reflect radiation () with a used wavelength (&#x3bb;). The antireflection coating () is arranged between the substrate () and the reflective multi-layer coating () to suppress reflection of heating radiation () with a heating wavelength (&#x3bb;) that differs from the used wavelength (&#x3bb;). The thermal manipulation device has at least one heating light source () to produce heating radiation ().

Optical element and optical arrangement therewith

A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Microlithographic projection exposure apparatus and measuring device for a projection lens

A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

Projection exposure apparatus with at least one manipulator

The invention relates to a projection exposure apparatus for semiconductor lithography, comprising at least one manipulator for reducing image aberrations, wherein the manipulator has at least two optical elements that can be positioned relative to one another, wherein at least one of the optical elements is spatially dependent in terms of its effect on an optical wavefront passing therethrough such that a local phase change of a wavefront propagating in the optical system is produced in the case of a relative movement of the optical elements against one another. Here, the spatially dependent effect of the at least one optical element can be set in a reversible dynamic manner.

Projection exposure apparatus with a highly flexible manipulator

A projection lens images a pattern of a mask arranged in the region of an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation with a work wavelength &#x3bb;&#x3c;260 nm. The projection lens has a multiplicity of optical elements with optical surfaces. The projection lens also has a wavefront manipulation system for controllable influencing of the wavefront of the projection radiation travelling from the object plane to the image plane. The wavefront manipulation system has a manipulator having a manipulator element and an actuating device or reversibly changing an optical effect of the manipulator element on radiation of the projection beam path.

Projection lens with wave front manipulator and related method and apparatus

A method of operating a microlithographic projection exposure apparatus includes, in a first step, providing a projection objective that includes a plurality of real manipulators. In a second step, a virtual manipulator is defined that is configured to produce preliminary control signals for at least two of the real manipulators. In a third step, performed during operation of the apparatus, a real image error of the projection objective is determined. In a fourth step, a desired corrective effect is determined. In a fifth step, first virtual control signals for the virtual manipulator are determined. In a sixth step, second virtual control signals for the real manipulators are determined.

Method of operating a microlithographic projection apparatus

A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n=(1&#x2212;&#x3b4;)+i&#xdf;, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n=(1&#x2212;&#x3b4;)+i&#xdf;, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation &#x3b4;of the real part of the first refractive index from 1 is large relative to the absorption coefficient &#xdf;of the first layer material and the deviation &#x3b4;of the real part of the second refractive index from 1 is small relative to the absorption coefficient &#xdf;of the second layer material.

Projection lens for EUV microlithography, film element and method for producing a projection lens comprising a film element

A projection objective of a microlithographic projection exposure apparatus contains a plurality of optical elements arranged in N&#x3e;&#x2212;2 successive sections Ato Aof the projection objective which are separated from one another by pupil planes or intermediate image planes. According to the invention, in order to correct a wavefront deformation, at least two optical elements each have an optically active surface locally reprocessed aspherically. A first optical element is in this case arranged in one section A, j=1 . . . N and a second optical element is arranged in another section A, k=1 . . . N, the magnitude difference |k&#x2212;j| being an odd number.

Projection objective for a microlithographic projection exposure apparatus

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Werneck, Germany

Norbert Wabra