Infineon Technologies Ag

Infineon Technologies Austria Ag

Norbert Thyssen

Juergen Zimmer

Klemens Pruegl

Andreas Strasser

Ralf-Rainer Schledz

Kerstin Kaemmer

Olaf Kuehn

Ines Uhlig

Anton Mauder

Rolf Weis

Dirk Offenberg

Achim Gratz

Marco Haubold

Stefan Hampl

A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.

Image sensor and device for an image sensor

A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.

Method for wafer bonding and compound semiconductor wafer

In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.

Method for producing a buried cavity structure

Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

XMR sensors with high shape anisotropy

A lateral power semiconductor device includes a semiconductor body having a first surface and a second opposite surface, a first main electrode, a second main electrode, a plurality of switchable semiconductor cells and at least one curved semiconductor portion. The first main electrode includes at least two sections and is arranged on the first surface. The second main electrode is arranged on the first surface and between the two sections of the first main electrode. The plurality of switchable semiconductor cells is arranged between a respective one of the two sections of the first main electrode and the second main electrode and is configured to provide a controllable conductive path between the first main electrode and the second main electrode. The curved semiconductor portion is between the first main electrode and the second main electrode and has increasing doping concentration from the first main electrode to the second main electrode.

Lateral power semiconductor device and method for manufacturing a lateral power semiconductor device

A detector includes a first semiconductor substrate and a second substrate, wherein the first semiconductor substrate includes a detector element for detecting a radiation or a particle and the second substrate includes a control circuit. The detector element extends from a first main surface of the first semiconductor substrate to a second main surface of the first semiconductor substrate.

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Dresden, Germany

Norbert Thyssen