Osram Gmbh

Osram Opto Semiconductors Gmbh

Siemens Aktiengesellschaft

Osram Opto Semi-conductors Gmbh Co. Ohg

Osram Opto Semiconductor Gmbh

Norbert Stath

Peter Schlotter

Ralf Schmidt

Ulrike Reeh

Günter Waitl

Klaus Höhn

Jürgen Schneider

Ernst Nirschl

Alfred Lell

Georg Bogner

Uwe Strauss

Walter Wegleiter

Hubert Ott

Karl-Heinz Schlereth

Karl Weidner

Jörg Erich Sorg

Werner Spaeth

Ewald Karl Michael Guenther

Werner Kuhlmann

Raimund Oberschmid

Klaus H&ouml;hn

J&uuml;rgen Schneider

G&uuml;nter Waitl

Gerald Neumann

Olaf Schoenfeld

Siegmar Kugler

Ralph Wirth

Herbert Brunner

Volker Härle

Hans-Ludwig Althaus

Bert Braune

Bernd Barchmann

Axel Kaltenbacher

Johann Luft

Werner Spath

Volker Haerle

Heinz Haas

Hans Wulkesch

Reinhard Sedlmeier

Matthias Rebhan

Rudolf Buchberger

Wolfgang Teich

Volker H&auml;rle

Ewald Karl Michael GÜNTHER

Klaus HÖHN

An optoelectronic component contains a semiconductor chip () and a carrier body (), which are provided with a transparent, electrically insulating encapsulation layer (), the encapsulation layer () having two cutouts () for uncovering a contact area () and a connection region () of the carrier body, and an electrically conductive layer () being led from the contact area () over a partial region of the encapsulation layer () to the electrical connection region () of the carrier body () in order to electrically connect the contact area () and the electrical connection region () to one another. The radiation emitted in a main radiation direction () by the semiconductor chip () is coupled out through the encapsulation layer (), which advantageously contains luminescence conversion substances for the wavelength conversion of the emitted radiation.

Optoelectronic component with a wireless contacting

An opto-electronic component has a carrier element () with a connection region (). Arranged on the carrier element () is a semiconductor chip (). A contact region () is mounted on the surface () of the semiconductor chip () remote from the carrier element (). The connection region () is electrically conductively connected to the contact region () by way of an unsupported conductive structure (). A method for manufacturing an opto-electronic component is described.

Optoelectronic component and method for producing an opto-electronic component

The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Light-radiating semiconductor component with a luminescence conversion element

In a method for producing a radiation-emitting optoelectronic component, a semiconductor chip is mounted by a first main area onto a carrier body and is electrically conductively connected at a first contact area to a first connection region, and a transparent electrically insulating encapsulation layer is applied to the chip and the carrier body. A first cutout in the encapsulation layer for at least partly uncovering a second contact area of the chip is produced, and a second cutout in the encapsulation layer for at least partly uncovering a second connection region of the carrier body is produced. Finally, an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body, is applied.

Method of producing a radiation-emitting optoelectronic component

An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Optoelectronic component and production method for an optoelectronic component

One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength.

Light-emitting device

A light-emitting device, comprising: a radiation source (), which emits radiation having a first wavelength, an optical waveguide (), into which the radiation emitted by the radiation source is coupled, and a converter material (), which converts the radiation transported through the optical waveguide () into light () having a second, longer wavelength. A light-emitting device of this type can have an improved light conversion efficiency.

An arrangement comprising a fiber-optic waveguide () and a detection device (), wherein the fiber-optic waveguide () comprises a core region (E) and a cladding region (C) surrounding the core region (E), wherein the core region has a higher refractive index than the cladding region, and wherein the detection device () can detect damage to the fiber-optic waveguide ().

Arrangement comprising a fiber-optic waveguide

Light-radiating semiconductor component with a luminescene conversion element

The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance LED chip and a method for producing same

The invention concerns a light-emitting diode chip () comprising a radiation-emitting active region () and a window layer (). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region () is smaller than the cross-sectional area of the window layer () available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance led chip and a method for producing same

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Wuppertal, Germany

Norbert Stath