Siemens Aktiengesellschaft

Siemens Aktiengesell Schaft

Norbert Seliger

Karl Weidner

Jörg Zapf

Herbert Schwarzbauer

Hubert Schierling

Thomas Komma

Thomas Licht

Rainer Kreutzer

Franz Auerbach

Matthias Rebhan

Laurence Amigues

Martin Birner

Bernd Gutsmann

Kerstin Häse

A switching device for switching a high operating voltage is described. The switching device-includes a first switching arrangement with a first self-conducting switching element), which has a control connector and a first and second main connector for forming a switching section. The switching device may include a second switching arrangement having a first and a second connector for forming a switching section, which is wired serially in respect to the switching section of the first switching arrangement. The second switching arrangement includes an optically triggerable switching element for switching the switching section of the second switching arrangement so it becomes conductive. The second connector of the second switching arrangement is connected with the control connector of the first self-conducting switching element.

Switching device and switching arrangements for switching at high operating voltage

To improve manufacture of an electronic circuit, the electronic circuit is composed of modules of sub-circuits arranged on a common substrate, such as a cooling body, and that are electrically interconnected by a planar electrical contact element.

Electronic circuit composed of sub-circuits and method for producing

A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.

Device having a contacting structure

In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.

Electrical component on a substrate and method for production thereof

According to the invention, a layer made of an electrically insulating material is applied to a substrate and a component that is arranged thereupon in such way that said layer follows the surface contour formed by the substrate and the component.

Method of manufacturing a device having a contacting structure

A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.

Method for making contact with electrical contact with electrical contact surfaces of substrate and device with substrate having electrical contact surfaces

Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours

A device with power semiconductor components controlling the power of high currents has each power semiconductor component insulated and fixed to a common cooled carrier body. Conductor bars, in addition to the power semiconductor components, are fixed to the carrier body, the conductor bars being electrically insulated and placed on top of each other, whereby each semiconductor bar has a free contact surface, and one electrical contact surface of each semiconductor component is electrically connected to a conductor bar by one or several electric conductor bridges and another electrical contact surface of the power semiconductor component is electrically connected to another bar conductor by one or several conductor bridges.

Device with power semiconductor components for controlling the power of high currents and use of said device

An arrangement in which a first contact surface ( ) for bonding one end ( ) of the bonding wire ( ) and a piezoelectric actuator ( ) are fixed on a support body ( ) and a second contact surface ( ) for bonding another end ( ) of the bonding wire ( ) is fixed to the actuator by an unsupported support body ( ). The second contact surface moves back and forth in relation to the support body by means of an actuator, at a frequency of between 0.1 Hz and a few KHz and in one or more directions ( ). The arrangement is suitable for use in testing the endurance of bonding wire connections.

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Munich, Germany

Norbert Seliger