Cyrium Technologies Incorporated

Pacific Light Technologies Corp.

Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Norbert Puetz

Juanita N Kurtin

Simon Fafard

Bruno J Riel

Benjamin Daniel Mangum

Brian Theobald

Kari N Haley

Weiwen Zhao

Nathan Evan Stott

Nathan Mclaughlin

Yagnaseni Ghosh

Morgan Vonnahme

Matthew Bertram

Joseph René Bruno Riel

A method of increasing photo-luminescent quantum yield (PLQY) of QDs to be used as down-converters placed directly on an LED chip includes synthesizing a plurality of quantum dots, applying energy to the plurality of quantum dots to increase PLQY of the plurality of quantum dots, dispensing the plurality of quantum dots onto the LED chip, and curing the LED chip.

Method and apparatus of applying light and heat to quantum dots to increase quantum yield

A quantum dot includes a nanocrystalline core and an alloyed nanocrystalline shell made of a semiconductor material composition different from the nanocrystalline core. The alloyed nanocrystalline shell is bonded to and completely surrounds the nanocrystalline core.

Alloyed rod structure in a nanocrystalline quantum dot

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

Quantum dots with multiple insulator coatings

A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material having a first bandgap, and a nanocrystalline shell comprising a second semiconductor material different than the first semiconductor material at least partially surrounding the nanocrystalline core, the second semiconductor material having a second bandgap greater than the first bandgap.

Nanocrystalline quantum dot heterostructure

A multi junction solar cell having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The solar cell includes an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the solar cell and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

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Norbert Puetz