Infineon Technologies Ag

Norbert Pielmeier

Swee Kah Lee

Evelyn Napetschnig

Muhammad Muhammat Sanusi

Nurfarena Othman

Chin Yung Lai

Siew Ching Seah

A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 &#x3bc;m to 10 &#x3bc;m. A method of manufacturing a metal surface with such micropores also is described.

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Wuppertal, Germany

Norbert Pielmeier