Osram Opto Semiconductors Gmbh

Osram Gmbh

Norbert Linder

Tony Albrecht

Wolfgang Schmid

Johann Luft

Klaus Streubel

Stefan Grötsch

Dominik Eisert

Stephan Lutgen

Peter Brick

Ralph Wirth

Ines Pietzonka

Ernst Nirschl

Bernd Mayer

Christian Karnutsch

Norwin Von Malm

Volker Härle

Matthias Sabathil

Uwe Strauss

Frank Jermann

Jürgen Moosburger

Krister Bergenek

Johannes Baur

Matthias Peter

Martin Zachau

Julius Muschaweck

Alexander Linkov

Franz Eberhard

Ulrich Zehnder

Rainer Butendeich

Heribert Zull

Ulrich Steegmüller

Peter Stauss

Dirk Berben

Kirstin Petersen

Werner Spath

Alexander Behres

Raimund Oberschmid

Manfred Mundbrod-Vangerow

Werner Späth

Günther Grönninger

Peter Heidborn

Frank Kühn

Stephan Miller

Günter Spath

Reinhard Sedlmeier

Siegmar Kugler

Martin Reufer

Stefan Grōtsch

Jacob Ulrich

Mark Hampel

Zhongyi He

Stefan GRÖTSCH

Various embodiments may relate to a fault detection device for streetlamp lighting system. The streetlamp lighting system includes multiple load groups which are powered by a power cable. The fault detection device includes a master detection control unit and load detection control units configured for respective load groups, wherein the master detection control unit determines, according to a first fault feedback signal provided by respective load detection control unit, whether the load group corresponding to the load detection control unit is failed, while the streetlamp lighting system is in a first state, and the master detection control unit determines, according to a physical quantity detected on the power cable, whether the power cable is failed, while the streetlamp lighting system is in a second state. In addition, various embodiments further relate to a method of controlling the fault detection device.

Fault detection device for streetlamp lighting system and method of operating the same

An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.

Semiconductor chip, display comprising a plurality of semiconductor chips and methods for the production thereof

An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Optoelectronic component

A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Method for manufacture of optically pumped, surface-emitting semiconductor laser device

An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.

Optoelectronic module and projection apparatus comprising the optoelectronic module

A radiation-emitting component () having a layer stack () which is based on a semiconductor material and which has an active layer sequence () for generating electromagnetic radiation, and a filter element () which is arranged after the active layer sequence () in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element ().

Radiation emitting element

An optoelectronic semiconductor chip including a radiation passage area, where a contact metallization is applied to the radiation passage area, and a first reflective layer sequence is applied to that surface of the contact metallization which is remote from the radiation passage area, and an optoelectronic component that includes such a chip.

Optoelectronic semiconductor chip

Described is an optoelectronic component with at least one semiconductor body having an active region for generating electromagnetic radiation, and with a housing comprising a filter element that is disposed after the active region in the emission direction, in which the filter element selectively transmits a primary radiation fraction having a predetermined primary radiation property.

An organic semiconductor laser, which is produced integrally with an electrically operable inorganic LED (), and also the method for producing said laser.

Organic semiconductor laser and method for producing it

A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of AlGaAsPwith 0&#x2266;x&#x2266;1 and 0&#x2266;y&#x2266;1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

Semiconductor substrate of GaAs and semiconductor device

The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same

A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer () in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field () generated by the vertical emitter. The pump radiation source has an active pump layer (), which is arranged downstream of the vertical emitter layer () in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer () being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer () or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer () is suppressed.

Optically pumped semiconductor device

The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof

In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

Radiation-emitting semi-conductor component

An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source () and a surface-emitting quantum well structure (), the pump radiation source () and the quantum well structure () being monolithically integrated. The pump radiation source () generates pump radiation () for optically pumping the quantum well structure (), a recess () for introducing the pump radiation () in the quantum well structure () being formed in the semiconductor body between the pump radiation source () and the quantum well structure ().

Semiconductor optical pumping device for radiation emission and the production method thereof

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Wenzenbach, Germany

Norbert Linder