Abb Schweiz Ag

Asea Brown Boveri Ag

Abb Schweiz Holding Ag

Norbert Galster

Stefan Linder

Jan Vobecky

Pavel Hazdra

In a process for fabricating a semiconductor component, in particular a semiconductor diode, a semiconductor substrate ( ) is provided with metal layers ( ) in order to form electrode terminals and with passivation ( ), and is exposed to particle irradiation (P) in order to adjust the carrier lifetime. This being the case, at least the metal layer ( ) on the irradiation side and the passivation ( ) are not applied until after the particle irradiation (P). As a result, a continuous defect region ( ), which precludes undesired edge effects, is obtained in the semiconductor substrate ( ).

Process for fabricating a semiconductor component

In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate ( ) is governed by first, unmasked bombardment ( ) with an axial profile and by subsequent, second, masked bombardment ( ) with a lateral profile, improved reverse characteristics are achieved in that the first, unmasked bombardment is ion bombardment ( ) which governs the switching response of the power diode and in that the second, masked bombardment is electron bombardment ( ), which reduces the active area of the power diode. In a power diode equipped with such a semiconductor substrate ( ), the thermal resistance R is reduced in relation to the active area of the power diode.

Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method

In a process for adjusting the carrier lifetime in a semiconductor component (1) by means of particle irradiation (P), at least two defect regions (10, 11, 12, 13) are produced in the semiconductor component (1). In this process, a particle beam (P), consisting of particles (a, b, c, d) with at least approximately the same initial energy, is acted on by at least one means (2), before reaching the semiconductor component (1), in such a way that the particles (a, b, c, d) subsequently have different energy values, at least two energy value groups being distinguishable. It is thereby possible, with a single particle irradiation operation, to produce an arbitrary number of defect regions whose arrangement and weighting is arbitrarily selectable.

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Rupperswil, Switzerland

Norbert Galster