Soitec

Norbert Colombet

Oleg Kononchuk

Didier Landru

Marcel Broekaart

Nadia Ben Mohamed

Isabelle Bertrand

Luciana Capello

Rénald Guerin

A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.

Removable structure and removal method using the structure

A process for the manufacture of a semiconductor element includes a stage of rapid heat treatment of a substrate comprising a charge-trapping layer, which is capable of damaging an RF characteristic of the substrate. The rapid heat treatment stage is followed by a healing heat treatment of the substrate between 700&#xb0; C. and 1,100&#xb0; C., for a period of time of at least 15 seconds.

Process for the manufacture of a semiconductor element comprising a layer for trapping charges

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Norbert Colombet