Asml Netherlands B.v.

Cymer, Inc.

Norbert Bowering

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Georgiy Olegovich Vaschenko

Oleh V Khodykin

Silvia De Dea

Alexander Bykanov

Peter Michael Baumgart

Jerzy R Hoffman

Bruno M La Fontaine

David C Brandt

Rodney D Simmons

Juan Armando Chavez

A multilayer mirror having a cap with a multilayer structure including a top layer and a series of bilayers each having an absorber layer and a spacer layer, where the materials for the top layer, absorber layers, and spacer layers are chosen to resist blistering.

EUV optical element having blister-resistant multilayer cap

Optical element protection systems for protecting optical elements and particularly reflective optical elements from degradation of their optical properties in harsh environments such as the environment inside a vacuum chamber of an EUV light source. The systems include the uses of combinations of materials in various layers where the materials are chosen and the layers are configured and arranged to extend the lifetime of the optical element without compromising its optical properties.

Harsh environment optical element protection

Devices and methods for generating EUV light are disclosed. The device comprises an oscillator having an oscillator cavity length, L, and defining an oscillator path and a multi-pass optical amplifier coupled with the oscillator to establish a combined optical cavity including the oscillator path, the combined cavity having a length, L, where L=(N+x)*L, where 'N' is an integer and 'x' is a number between 0.4 and 0.6. The amplifier comprises a polarization discriminating optic inputting light traveling along a first beam path from the oscillator and having substantially a first linear polarization into the amplifier and outputting light having substantially a linear polarization orthogonal to the first polarization out of the amplifier along a second beam path.

Drive laser for EUV light source

A target material supply apparatus for an extreme ultraviolet (EUV) light source includes a tube that includes a first end, a second end, and a sidewall defined between the first and second ends. At least a portion of an outer surface of the tube includes an electrically insulating material, the first end receives a pressurized target material, and the second end defines an orifice through which the pressurized target material passes to produce a stream of target material droplets. The target material supply apparatus also includes an electrically conductive coating on the outer surface of the tube. The coating is configured to electrically connect the outer surface of the tube to ground to thereby reduce surface charge on the outer surface.

Target material supply apparatus for an extreme ultraviolet light source

In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, SiN, BC, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5period transition metal.

EUV optics

A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

EUV light source components and methods for producing, using and refurbishing same

A device comprising a laser source producing a continuous output on a beam path and an amplifier is disclosed. The device further includes a partially transmissive, partially reflective optic disposed on said beam path between said laser source and said amplifier. The device further includes a droplet generator positioned to deliver a droplet moving on a path intersecting said beam path, the droplet reflecting light to establish an optical cavity with said optic.

As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate.

Systems and methods for heating an EUV collector mirror

A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Laser produced plasma EUV light source

Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.

Growing community of inventors

Bielefeld, Germany

Norbert Bowering