Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Norbert Bauer

Friedrich Bobel

Thomas Wagner

Hermann Haken

Peter Schmitt

Randolf Hanke

Michael Maisl

Friedrich G Boebel

A device for detecting X-radiation comprises a scintillator for converting X-radiation impinging thereon into light, a detecting device for detecting the light produced by the scintillator, and a fibre optic system for feeding the light produced by the scintillator to the detecting device. The device for detecting X-radiation is additionally provided with a heating means for heating at least one section of the fibre optic system to a predetermined temperature while the X-radiation is being detected.

Fibre optic X-ray camera

Person identification based on movement information

Process for the classification of objects

Electronic component

The invention describes a procedure and an arrangement for measurement of temperature and thickness of layer during a deposition or coating process. As coating or depositing processes known technologies of semi-conductor manufacturing arrangements, plasma devices, ion devices, and other dry-etching arrangements may be used. The invention can also be applied to the manufacture of optical coatings. As a consequence of interference of the thermal radiation of the substrate at the growing layer, the emissivity .epsilon. changes continuously during coating or depositing, therefore, a pyrometric measurement of temperature may not be applied. This basic problem is solved by the invention, which uses a reflectometer, which determines the reflectivity R of the wafer. According to the law of conservation of energy .epsilon.=1-R so that with said reflectometer the actual emissivity of the whole (multi-layer) system may be determined. The measurement of temperature then is effected by means of a determination equation. Concurrently the thickness is determined by a comparison of the reflectometer-curve and a theoretical dependency of thickness of layer.

Method and arrangement for determining the layer-thickness and the

Process for the measurement of the thickness and refractive index of a

A semiconductor production control and measuring unit for a two-dimensional detection and control of concentration and pressure distribution of process particles within a process chamber, which forms part of a semiconductor production device and in the interior of which a vacuum can be generated with the aid of a vacuum pump. A light fan source produces a substantially parallel light fan within the process chamber, the light fan penetrating the area of the process chamber which is to be examined with regard to concentration distribution or pressure distribution, the wavelength of the light emitted by the light fan source being so short that the process particle have imparted thereto an excitation energy sufficient for fluorescent radiation. A camera is disposed at an angle with respect to the light fan and it covers the area to be examined. In the spectral region of the fluorescent radiation of the process particles, the camera has a quantum efficiency which detects the fluorescent radiation. A processing device is connected to the camera and determines the two-dimensional concentration and pressure distribution of the process particles on the basis of the image signals received from the camera.

Semiconductor production control and/or measuring unit

Growing community of inventors

Erlangen, Germany

Norbert Bauer