Spawnt Private S.a.r.l.

Momentive Performance Materials Gmbh

Nagarjuna Fertilizers and Chemicals Limited

Spawnt Private S.à.r.1.

Norbert Auner

Christian Bauch

Rumen Deltschew

Gerd Lippold

Sven Holl

Javad Mohsseni

Seyed-Javad Mohsseni-Ala

Kenrick M Lewis

Ingolf Endler

Banibrata Pandey

Thoralf Gebel

Alexander G Sturm

Tobias Santowski

Thorsten Felder

Julius Pretterebner

Max C Holthausen

Birgit Urschel

Mandy Höhn

Felix Neumeyer

The invention relates to a process for the preparation of trichlorosilane (HSiCl3) which comprises the reaction of tetrachlorosilane (SiCU) with hydridosilanes in the presence of a catalyst.

Synthesis of trichlorosilane from tetrachlorosilane and hydridosilanes

The present invention relates to an integrated process for the manufacture of methylchlorohydridomonosilanes in particular, from products of the M&#xfc;ller-Rochow Direct Process.

Integrated process for the manufacture of methylchlorohydridomonosilanes

The invention relates to a process for the manufacture of organomonosilanes bearing both hydrogen and chlorine substituents at the silicon atom by subjecting a silane substrate comprising one or more silanes selected from organomonosilanes, organodisilanes and organocarbodisilanes, with the proviso that at least one of these silanes has at least one chlorine substituent at the silicon atom, to a redistribution reaction in the presence of a phosphane or amine acting as a redistribution catalyst.

Process for the production of organohydridochlorosilanes

The invention relates to a method for cleaving silicon-silicon bindings and/or silicon-chlorine bindings in monosilanes, polysilanes, and/or oligosilanes. According to the invention, the monosilane, polysilane, and/or oligosilane is dissolved or suspended in an ether or in an ether-hydrochloric acid solution. Said method is used for example for preparing halogenated oligosilanes from halogenated polysilanes and for preparing siloxanes from organochlorosilanes and chlorinated monosilanes. Said method is particularly simple to carry out and as a result is economical.

Process for the cleavage of silicon-silicon bonds and/or silicon-chlorine bonds in mono-, poly- and/or oligosilanes

The invention relates to a process for the manufacture of organomonosilanes, in particular, bearing both hydrogen and chlorine substituents at the silicon atom by subjecting a silane substrate comprising one or more organomonosilanes, with the proviso that at least one of these silanes has at least one chlorine substituent at the silicon atom, to the reaction with one or more metal hydrides selected from the group of an alkali metal hydride and an alkaline earth metal hydride in the presence of one or more compounds (C) acting as a redistribution catalyst.

The invention relates to a method for the plasma-assisted synthesis of organohalosilanes in which organohalosilanes of the general empirical formula RRSiX(X=F, Cl, Br or I; p=1-4; p=m+o; m=1-4; o=0-3; R, R=alkyl, alkenyl, alkinyl, aryl) and/or carbosilanes of the general empirical formula RSiXCHSiRX(X=F, Cl, Br or I; q=0-3; r=0-3; R, R=alkyl, alkenyl, alkinyl, aryl) are formed by activating a plasma in a mixture of one or more volatile organic compounds from the group of alkanes, alkenes, alkines and aromates with SiXand/or organohalosilanes RSiX(X=F, Cl, Br oder I; n=1-4; R=alkyl, alkenyl, alkinyl, aryl).

Plasma-assisted organofunctionalization of silicon tetrahalides or organohalosilanes

The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si&#x2014;Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.

Halogenated polysilane and plasma-chemical process for producing the same

The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si&#x2014;Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Halogenated polysilane and thermal process for producing the same

A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiX, where X is halogen, which may be partially replaced by hydrogen, and where 1&#x3c;n&#x3c;2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Method for removing impurities from silicon

The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group

The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.

Method for the production of silicon from silyl halides

A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield.

Method for producing hexachlorodisilane

The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si&#x2014;Si and/or Ge&#x2014;Si and/or Ge&#x2014;Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Nanowires made of novel precursors and method for the production thereof

Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C&#x2014;SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C&#x2014;SiC and amorphous SiC or halogen-containing nanocrystalline 3C&#x2014;SiC and amorphous carbon.

Bodies coated by SiC and method for creating SiC-coated bodies

Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120&#xb0; C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.

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Glashuetten, Germany

Norbert Auner