M/a -com, Inc.

Other

Skyworks Solutions, Inc.

Tyco Electronics Logistics Ag

Norbert Andrew Schmitz

Wayne Mack Struble

Richard John Giacchino

Philip Howard Thompson

Christopher Dirk Weigand

Christopher N Brindle

Edward F Lawrence

Darryl Earl Evans

Victor G Abbott

Mark N Ayvazian

David M Johnson

Darryl E Evans

An apparatus and method for detecting radio frequency transmit power levels produced by a power amplifier of a wireless device is described. In one exemplary apparatus implementation, the apparatus includes a power amplifier, an antenna switch and a power amplifier detector. The power amplifier is configured to amplify a transmit signal at a desired power level. An antenna switch, is located between the power amplifier and an antenna, and is configured to switch the antenna from a receive mode to a transmit mode and vice versa. A power amplifier detector is connected to the antenna switch. The power amplifier detector is configured to receive a leakage signal from the antenna switch as a basis to detect the power level of the transmit signal.

Apparatus and method for detecting radio frequency transmission power levels

An exemplary antenna switching circuit comprises first, second, third and fourth switches. The first switch is activated by a first control signal for establishing a connection between a first transmit port and an antenna; the second switch is activated by a second control signal for establishing a connection between a second transmit port and the antenna; the third switch is activated by a third control signal for establishing a connection between a first receive port and the antenna; and the fourth switch is activated by the third control signal for establishing a connection between a second receive port and the antenna. With this arrangement, the first receive port and the second receive port are simultaneously connected to the antenna when the third switch and the fourth switch are activated by the third control signal.

Efficient multiple-band antenna switching circuit

A single-pole multiple-throw RF switch includes first and second FET arrangements, each having a gate and a controlled current path (CCP). One end of the CCP of each FET is connected to a common port by way of an arrangement which blocks DC flow between the FETs, but allows RF flow. Bias is applied to the gates of the FETs to enable RF flow through the CCP of a selected one and not through the others. One version uses a single bias source and cross-coupled resistors, and another version uses plural bias sources switched to the various FETs.

Individually biased transistor high frequency switch

An integrated circuit package houses and connects to a die to form an integrated circuit with internal matching. The package comprises a lead frame comprising at least one transmission line, a die paddle, and at least one input lead and at least one output lead. Bond wires connect select locations along the at least one transmission line to ground through impedance matching circuit components located within the integrated circuit to provide an impedance matching network associated with at least one of the output leads. The package may also substantially encapsulate the lead frame, while exposing the die paddle and the input/output leads.

Apparatus, methods and articles of manufacture for packaging an integrated circuit with internal matching

An integrated circuit package houses and connects to a die to form an integrated circuit with internal matching. The package comprises a lead frame comprising at least one transmission line, a die paddle, and at least one input lead and at least one output lead. Bond wires connect select locations along the at least one transmission line to ground through impedance matching circuit components located within the integrated circuit to provide an impedance matching network associated with at least one of the output leads. A plastic mold compound substantially encases the lead frame, while exposing the die paddle and the input/output leads. Incorporating the transmission line into the lead-frame avoids having to place the matching network outside of the integrated circuit package. That is, etching the lead frame to provide the transmission line, and placing components (e.g., capacitors, inductors, etc.) of the impedance transform matching circuit within the integrated circuit and connecting the components between select locations on the transmission line and ground is relatively inexpensive.

Package for integrated circuit with internal matching

A field effect transistor (FET) comprising a plurality of drain finger electrodes, source finger electrodes and gate finger electrodes disposed in an active region of a semiconductor substrate; a drain bus disposed outside the active region and electrically connecting the drain finger electrodes to each other; a gate bus disposed outside the active region and electrically connecting the gate finger electrodes to each other; and a source bus disposed outside the active region and electrically connecting the source finger electrodes to each other; wherein the drain fingers are electrically connected to each other via the drain bus without crossing over the source or gate fingers.

Growing community of inventors

Salem, NH, United States of America

Norbert Andrew Schmitz