Nec Corporation

Nolifumi Sato

Hitoshi Mitani

Hidetaka Natsume

Takami Hiruma

Manabu Ando

Shinji Ohara

There is provided a liquid crystal display including (a) a first substrate, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a first electrode formed on the first substrate at a surface facing the liquid crystal layer, (e) a second electrode formed on the first substrate at a surface facing the liquid crystal layer, and cooperating with the first electrode to form a pixel, the first and second electrodes generating an electric field therebetween to thereby implement in-plane switching, and (f) an interlayer insulating film formed at least below the second electrode, but not formed at least below the first electrode, a dielectric layer formed between at least a part of an upper surface of the first electrode and the liquid crystal layer being designed to have a capacitance per a unit area, almost equal to a capacitance per a unit area of a dielectric layer formed between at least a part of an upper surface and the liquid crystal layer. In the above-mentioned liquid crystal display, since a dielectric distance between the first electrode and the liquid crystal layer is almost equal to a dielectric distance between the second electrode and the liquid crystal layer, it is possible to balance flexo-electric effects on the first and second electrodes, which ensures suppression in generation of after-images.

In-plane switching LCD having interlayer insulator at particular region

Method of fabricating an in plane switching LCD in which an electrode is

There is provided a liquid crystal display including (a) a first substrate, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a first electrode formed on the first substrate at a surface facing the liquid crystal layer, (e) a second electrode formed on the first substrate at a surface facing the liquid crystal layer, and cooperating with the first electrode to form a pixel, the first and second electrodes generating an electric field therebetween to thereby implement in-plane switching, and (f) an interlayer insulating film formed at least below the second electrode, but not formed at least below the first electrode, a dielectric layer formed between at least a part of an upper surface of the first electrode and the liquid crystal layer being designed to have a capacitance per a unit area, almost equal to a capacitance per a unit area of a dielectric layer formed between at least a part of an upper surface and the liquid crystal layer. In the abovementioned liquid crystal display, since a dielectric distance between the first electrode and the liquid crystal layer is almost equal to a dielectric distance between the second electrode and the liquid crystal layer, it is possible to balance flexo-electric effects on the first and second electrodes, which ensures suppression in generation of after-images.

Liquid crystal display and method of fabricating the same

There is provided a liquid crystal display including (a) a first substrate with at least one recessed portion, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a first electrode formed on the first substrate at an upper surface facing the liquid crystal layer, (e) a second electrode, at least part of which is, formed on the recessed portion of the first substrate at a surface facing the liquid crystal layer, and cooperating with the first electrode to form a pixel, the first and second electrodes generating an electric field therebetween to thereby implement in-plane switching, and (f) an interlayer insulating film formed at least below the second electrode, but not formed at least below the first electrode, a dielectric layer formed between at least a part of an upper surface of the first electrode and the liquid crystal layer being designed to have a capacitance per a unit area, almost equal to a capacitance per a unit area of a dielectric layer formed between at least a part of an upper surface and the liquid crystal layer. In the above-mentioned liquid crystal display, since a dielectric distance between the first electrode and the liquid crystal layer is almost equal to a dielectric distance between the second electrode and the liquid crystal layer, it is possible to balance flexo-electric effects on the first and second electrodes, which ensures suppression in generation of after-images.

In-plane switching LCD with recessed substrate and method of fabrication

In-plane switching type liquid crystal display wherein the upper surface

The invention provides a method of fabricating a semiconductor device, including the steps of (a) forming an impurity region at a surface of a silicon substrate, (b) depositing an insulative film over the silicon substrate, (c) forming a contact hole through the insulative film to expose the impurity region of the silicon substrate, (d) forming an electrode wiring over the contact hole, the electrode wiring comprising a refractory metal silicide film and a silicon film overlying on the metal silicide film, the metal silicide film overlying the exposed impurity region, (e) depositing a second insulative film over a resultant, (f) depositing a polysilicon film on the second insulative film, (g) patterning the polysilicon film to form an element, and (h) heat-treating a resultant at high temperature in oxidizing atmosphere. The step (h) is to be carried out at any time after the step (f) has been completed. In the method, even if a semiconductor device is heat-treated at high temperature in oxidizing atmosphere, there occurs no voids in the silicon substrate below the refractory metal silicide film. This is because silicon atoms are supplied from the silicon film overlying on the refractory metal silicide film to the metal silicide film. Thus, reliable electrical connection between the electrode wiring and the silicon substrate is ensured.

Method of fabricating semiconductor device including high temperature

In an SRAM cell including two cross-coupled inverters each having a first resistance element and a drive MOS transistor, a second resistance element is connected between the first and the drive MOS transistor. A gate electrode of the drive MOS transistor of one of the inverters is connected between the first and second resistance elements of the other.

Soft error suppressing resistance load type SRAM cell

A flip-flop is composed of inverters including first and second MISFETs each comprising a TFT or an SOI transistor. A third MISFET, which comprises a TFT or an SOI transistor, has a gate connected to a write selecting signal line, and is connected between the output terminal of one of the inverters and a write/read signal line. A fourth MISFET has a gate connected to the gate of the other inverter. A fifth MISFET has a drain and a source connected to the write/read signal line and the drain of the fourth MISFET, and a gate connected to a read selecting signal line.

Growing community of inventors

Tokyo, Japan

Nolifumi Sato