Samsung Electronics Co., Ltd.

Nok-Hyun Ju

Jae-Hoon Lee

Chan-Ho Lee

Hyeong-Mo Yang

Sung-Ii Chang

A metal-oxide-semiconductor field-effect transistor device includes a first active area, a first gate electrode configured to cross the first active area and extend in a Y direction, and define a first source area and a first drain area, first gate contacts disposed on the first gate electrode to align on a first virtual gate passing line extending in the Y direction, first source contacts disposed on the first source area to align on a first virtual source passing line extending in the Y direction, and first drain contacts disposed on the first drain area to align on a first virtual drain passing line extending in the Y direction, wherein at least one of the first drain contacts is disposed to align on any one of first virtual X-straight lines configured to pass between the first source contacts and extend parallel in an X direction perpendicular to the Y direction.

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Hwaseong-si, South Korea

Nok-Hyun Ju