International Business Machines Corporation

Noelia Vico Trivino

Kirsten Emilie Moselund

Markus Scherrer

Svenja Mauthe

Preksha Tiwari

Matthias Mergenthaler

Philipp Staudinger

A qubit device or system having isolated bottom corner gates includes a semiconductor substrate and a semiconductor fin perpendicularly adjoining a top surface of the substrate. The qubit device also includes a first gate located at a first corner between a first side of the fin and the top surface of the substrate, and a second gate located at a second corner between a second, opposite side of the fin and the top surface of the substrate. The first and second gates are electrically isolated from each other and used to control a first quantum dot near the top of the fin. A third gate located at the first corner has a contact for accumulating a channel to facilitate charge transport to and from a second quantum dot located near the bottom of the fin accumulated using the first and second gates.

Isolated bottom corner gates for spin-qubits in a fin

The invention relates to a method for fabricating a semiconductor device. The method includes providing a cavity structure comprising a seed area with a seed material. The method further includes growing, within the cavity structure, a quantum dot structure in a first growth direction from a seed surface of the seed material and growing, in the first growth direction, a first embedding layer on a first surface of the quantum dot structure. The method further includes removing the seed material and growing, within the cavity structure, on a second surface of the quantum dot structure, a second embedding layer in a second growth direction. The second surface of the quantum dot structure is different from the first surface of the quantum dot structure and the second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

Fabrication of a semiconductor device including a quantum dot structure

The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material. The method includes further steps of removing the seed material, growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure and growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction. The second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.

The invention relates to a method for fabricating a semiconductor structure. The method comprises fabricating a photonic crystal structure of a first material, in particular a first semiconductor material and selectively removing the first material within a predefined part of the photonic crystal structure. The method further comprises replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy. The one or more second materials may be in particular semiconductor materials. The invention further relates to devices obtainable by such a method.

Fabrication of semiconductor structures

A method for fabricating an ellipsoidal or semi-ellipsoidal semiconductor structure includes steps of providing a semiconductor substrate and fabricating an ellipsoidal or semi-ellipsoidal cavity structure on the semiconductor substrate. The cavity structure encompasses a seed surface of the semiconductor substrate. The method includes a further step of growing the ellipsoidal or semi-ellipsoidal semiconductor structure within the ellipsoidal or semi-ellipsoidal cavity structure from the seed surface of the semiconductor substrate. Fabricating the cavity structure includes arranging a droplet comprising a sacrificial material on the semiconductor substrate, forming a layer of a coating material on the semiconductor substrate and the droplet, and selectively removing the sacrificial material of the droplet to expose the cavity structure.

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Zurich, Switzerland

Noelia Vico Trivino