Fei Comapny

Oregon Physics, LLC

Noel S Smith

Clive D Chandler

Paul P Tesch

Mark Utlaut

Lawrence Scipioni

Roderick W Boswell

Orson Sutherland

John Keller

Christine Charles

Shouyin Zhang

Walter Skoczylas

Noel Paul Martin

Dave Tuggle

Gregory A Schwind

Anthony Graupera

Sean Kellogg

David William Tuggle

Andrew B Wells

Milos Toth

N William Parker

Tom Miller

Philip James Witham

William N Parker

Sean Kellog

Mark W Utlaut

James Mcginn

Tom Dirriwachter

In a plasma ion source having an induction coil adjacent to a reactor chamber for inductively coupling power into the plasma from a radio frequency power source and designed for negative and positive ion extraction, a method for operating the source according to the invention comprises providing radio frequency power to the induction coil with a RF amplifier operating with a variable frequency connected to a matching network mainly comprised of fixed value capacitors. In this device, the impedance between the RF power source and the plasma ion source is matched by tuning the RF frequency rather than adjusting the capacitance of the matching network. An option to use a RF power source utilizing lateral diffused metal oxide semiconductor field effect transistor based amplifiers is disclosed.

Inductively coupled plasma ion source with tunable radio frequency power

In a plasma ion source having an induction coil adjacent to a reactor chamber for inductively coupling power into the plasma from a radio frequency power source and designed for negative and positive ion extraction, a method for operating the source according to the invention comprises providing radio frequency power to the induction coil with a RF amplifier operating with a variable frequency connected to a matching network mainly comprised of fixed value capacitors. In this device the impedance between the RF power source and the plasma ion source is matched by tuning the RF frequency rather than adjusting the capacitance of the matching network. An option to use a RF power source utilizing lateral diffused metal oxide semiconductor field effect transistor based amplifiers is disclosed.

RF system, magnetic filter, and high voltage isolation for an inductively coupled plasma ion source

The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Plasma source for a focused ion beam system

An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.

Method for attachment of an electrode into an inductively-coupled plasma

The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.

Multi-source plasma focused ion beam system

An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.

Plasma source for charged particle beam system

System for attachment of an electrode into a plasma source

A cluster source is used to assist charged particle beam processing. For example, a protective layer is applied using a cluster source and a precursor gas. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas.

Charged particle-beam processing using a cluster source

Magnetically enhanced, inductively coupled plasma source for a focused ion beam system

A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Localized plasma processing

A plasma source for processing or imaging a substrate, for ion source for proton therapy, for ion thrusters, or for high energy particle accelerators includes a coolant circuit passing adjacent to a plasma ion reactor chamber and RF antenna coils. In a method for operating the plasma ion source having an induction coil adjacent to a reaction chamber for inductively coupling power into the plasma from a radio frequency power source, the method comprises pumping a dielectric fluid into contact with induction coils of the plasma ion source along the coolant circuit. Use of the dielectric fluid both electrically insulates the plasma chamber, so that it can be biased to 30 kV and up, and efficiently transfers heat away from the plasma chamber.

High voltage isolation and cooling for an inductively coupled plasma ion source

A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

High resolution plasma etch

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Lake Oswego, OR, United States of America

Noel S Smith