Sony Corporation

Sony Group Corporation

Nobuyuki Yoshitake

Hideki Mori

Hirokazu Ejiri

Kenji Azami

Terukazu Ohno

Shinji Takakura

By stably separating a melting location of a fuse () from conductive layers (A,B), reliable melting of the fuse () is enabled. A fuse () including a fuse body (A) and two pads (Ba,Bb) connected by this and two conductive layers (A,B) individually connected to the two pads (Ba,Bb) are formed in a multilayer structure on a semiconductor substrate (). A length of the fuse body (A) is defined so that the melting location of the fuse () becomes positioned in the fuse body (A) away from the region overlapped on the conductive layer (A orB) when an electrical stress is applied between two conductive layers (A,B) and the fuse () is melted.

Semiconductor device

A semiconductor device comprising an isolating layer (diffusion layer) having a deep depth which can be produced with improved productivity and a method of the same. The semiconductor device comprises a semiconductor substrate of a first conductivity type; a first diffusion layer of a second conductivity type formed in the semiconductor substrate; a first semiconductor layer formed on the semiconductor substrate; a second diffusion layer of the second conductivity type formed in the first semiconductor layer and connected to the first diffusion layer; and a second semiconductor layer formed on the first semiconductor layer; the second semiconductor layer being electrically isolated from the semiconductor substrate by the first diffusion layer and the second diffusion layer.

Semiconductor device and method for producing the same

A photo IC having a plurality of photodiodes is disclosed. A semiconductor region to absorb stray carriers is provided between the photodiodes. Stray carriers generated by incidence of light are absorbed by the semiconductor region. As a result, crosstalk between the photodiodes is reduced.

Growing community of inventors

Kanagawa, Japan

Nobuyuki Yoshitake