Rohm Co., Ltd.

Nobuyuki Yamada

Takeshi Yoshida

Kei Hayashi

Masahiro Sakuragi

Masahide Tanaka

Yoshihiro Ikefuji

Kenji Yamamoto

Yoshitsugu Uedaira

Yoshihiro Tada

Yuichiro Nakata

Junji Fujino

Toshimitsu Tamagawa

Takatoshi Murakami

Disclosed is a mobile device comprising an acceleration detection unit for detecting acceleration relative to the device; a condition identification unit; and a power supply controller which determines, from a combination of the output of the acceleration detection unit and the output of the condition identification unit, whether or not to begin to supply power to the device.

Mobile device

A semiconductor pressure sensor () includes a thin film piezoelectric element () which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (). The thin film piezoelectric element () is formed at a distance away from diffusion resistors (, and) functioning as strain gauges and is extended to the proximity of a bonding pad (A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (F) connected to a lower electrode thereof. The diffusion resistors (, and) constitute a bridge circuit by metal wiring () and diffusion wiring (). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor ().

Semiconductor pressure sensor, pressure sensor apparatus, electronic equipment, and method of manufacturing semiconductor pressure sensor

In an angular velocity sensor, an upper electrode of a first piezoelectric element and a lower electrode of a second piezoelectric element are connected to an input terminal of a first Q/V conversion circuit, and a lower electrode of the first piezoelectric element and an upper electrode of the second piezoelectric element are connected to an input terminal of a second Q/V conversion circuit. Thus, vibration noise components of the quantities of charge generated at the first and second piezoelectric elements are cancelled out, and Coriolis components of the quantities of charge generated at the first and second piezoelectric elements are added, whereby only the Coriolis components are extracted.

Angular velocity sensor and synchronous detection circuit used therein

From an amplifier circuit of a plurality of pixels each, a signal is directly output to a signal line. Even if the signal line is longer and the signal line has an increased parasitic capacitance, attenuation of the signal transmitted through the signal line can be prevented. Therefore, the dynamic range of the signal output can be expanded and the information can be output accurately.

Image sensor, module and electronic device

A filter circuit has: a first and a second current mirror circuit that are each built with a plurality of transistors and that respectively pass a first and a second mirror current according to a constant current; an input terminal via which an input pulse signal is fed in; a first transistor that, in response to the signal fed in via the input terminal and by using a supply voltage, makes the first current mirror circuit operate; a second transistor that, operating in inverted synchronism with the first transistor, in response to the signal fed in via the input terminal and by using a ground voltage, makes the second current mirror circuit operate; a capacitor that is charged by the first mirror current and that is discharged by the second mirror current; and an output terminal via which a voltage at one end of the capacitor is fed out. Thus, the filter circuit permits its filter constant to be set accurately in a wide range without relying on the driving capacity of the input signal, and can be integrated without an undue increase in device scale.

Filter circuit, and image sensor, image sensor module, and image reading apparatus provided therewith

A semiconductor device includes: a plurality of external signal input means; an external input unit having a switch each connected between the external signal input means and a read line and electrically connected for output from the external signal input means on the read line; a shift register receiving an external control signal and an external clock signal and synchronized with the external clock signal to shift successively the external control signal to provide shifted data and output the external control signal to electrically connect the switches in accordance with the shifted data; an output circuit receiving the external control signal from the shift register and externally outputting the external control signal; and a frequency divider circuit dividing the external clock signal in frequency to generate and output an internal clock signal, wherein the output circuit is synchronized with the internal clock signal to externally output the external control signal.

Semiconductor device capable of preventing erroneous operation attributed to electrostatic noise, and input device and scanner capable of preventing electrostatic noise

The breakdown voltage between the potential of a terminal and the ground potential (or power supply potential) is improved by increasing the gate width of an MOS transistor included in a switch. Accordingly, another switch and the like are protected even when surge is applied to the terminal. By increasing the gate width of the MOS transistor included in the switch, the size of the other switch does not have to be increased. Therefore, variation in the potential at a node occurring when the other switch attains a non-conductive state from a conductive state can be suppressed. Therefore, a semiconductor device having the electrostatic breakdown voltage improved without influence on processing carried out based on an input potential from an external source, a module including a plurality of such semiconductor devices, and an electronic device including such a module can be provided.

Semiconductor device, module, and electronic device including a conversion circuit having a second switch rendered conductive together with a first switch

The invention relates to a technique removing a dark voltage noise signal occurring at the time of light shielding of a photoelectric conversion device, simplifying the system configuration such that the cost and occupying area is reduced, and suppressing variation among a plurality of buffer amplifiers. In order to obtain such a photoelectric conversion device, a photoelectric conversion elementincludes: a first accumulating unitthat accumulates an output signal outcoming from the photoelectric conversion element during a first period; a second accumulating unitthat accumulates an output signal outcoming from the photoelectric conversion element during a second period different from the first period; first and second switch unitsandused for selectively introducing the output signal from the photoelectric conversion elementto the first or second accumulating unit; and an output unit that outputs output signals from the first and second accumulating unitsandby inversing the polarity of the first accumulating unit

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Kyoto, Japan

Nobuyuki Yamada