Sharp Kabushiki Kaisha Corporation

Nobuyuki Watanabe

Tetsuroh Murakami

Eiji Kametani

Yukari Inoguchi

A semiconductor light-emitting device has an n-type DBR layer (), an n-type cladding layer (), an active layer (), a p-type cladding layer (), a p-type intermediate layer (), a p-type contact layer (), a p-type transparent substrate (), ohmic electrodes (and), and a reflecting layer (). The n-type DBR layer () has reflectivity for the emission wavelength of the active layer ().

Semiconductor light-emitting device and method of manufacturing the same

A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layerincluding an AlGaInP active layer and a second waferwhich transmits light derived from the active layer. The crystal axes of the epitaxial layerand the second waferare generally aligned with each other and are in the range of &#x2212;15&#xb0; to +15&#xb0; with respect to a lateral face {} of the second wafer. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.

Growing community of inventors

Mihara, Japan

Nobuyuki Watanabe