Micron Technology Incorporated

Nobuyuki Umeda

Peter Mayer

Andreas Schneider

Casto Salobrena Garcia

Rethin Raj

Martin Brox

Methods, systems, and devices for activate commands for memory preparation are described. A memory device may receive an activate command for a row of a memory bank in the memory device. The activate command may include an indicator that indicates a type of an access operation associated with the activate command. The memory device may perform, based on the type of the access operation, an operation to prepare the memory device for the access operation. The memory device may then receive an access command for the access operation after performing the operation to prepare the memory device for the access operation.

Activate commands for memory preparation

Methods, systems, and devices for multi-driver signaling are described. An apparatus may include a first voltage source configured to supply a positive voltage and a second voltage source configured to supply a negative voltage. The apparatus may also include a first driver configured to couple a transmission line of a bus with the first voltage source and a second driver configured to couple the transmission line of the bus with the second voltage source. The first driver may be configured to transfer current to the transmission line based on a configurable resistance of the first driver. And the second driver configured to transfer current from the transmission line of the bus based on a configurable resistance of the second driver.

Multi-driver signaling

Methods, systems, and devices for techniques for communicating multi-level signals are described. A first device may be configured to communicate signals with a second device according to a modulation scheme. The first device may transmit a first signal to the second device at a first voltage level of the modulation scheme corresponding to a first multi-bit value. The first device may select a second voltage level of the modulation scheme based on a difference between the first voltage level and a third voltage level of the PAM scheme, and may transmit a second signal to the second device at the second voltage level to indicate a second multi-bit value corresponding to the third voltage level. The second device may decode the second signal to determine the second multi-bit value based on receiving the first signal at the first voltage level and the second signal at the second voltage level.

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Tokyo, Japan

Nobuyuki Umeda