Matsushita Electric Industrial Co., Ltd.

Mitsubishi Gas Chemical Company, Inc.

Nobuyuki Uemura

Akihiko Ishibashi

Masahiro Kume

Isao Kidoguchi

Yoshihiro Hara

Yuzaburo Ban

Satoshi Kamiyama

Hidemi Takeisi

Yuuzaburou Ban

Hiroshi Horikoshi

Masaaki Yuri

Motoharu Takeuchi

Minoru Kubo

Takashi Nishikawa

Yoichi Sasai

Masanori Shimuta

Shinji Nakamura

Kenichi Takahashi

Yoshiaki Hasegawa

Kunio Itoh

Kenji Orita

Takeshi Uenoyama

Ayumu Tsujimura

Akikazu Amagai

Yuichi Yoshimura

Atsuki Niimi

Kazuhiro Ohkawa

Masahiro Isida

Minoru Ohashi

Akikazu Amagi

Episulfide compounds useful as starting materials of optical materials are stably stored for a long period of time at a temperature ranging from their solidifying points to 20&#xb0; C., preventing the production or precipitation of polymers and the yellowing.

Method of storing episulfide compound

A semiconductor device having a plurality of semiconductor laser elements is provided, which is capable of reducing an interval of emission points between the semiconductor laser elements and also capable of preventing heat generated by a semiconductor laser element from affecting other semiconductor elements. A concave portion is formed on a silicon substrate, and a protrusion of a quadrangular truncated pyramidal shape consisting of slanted faces of a (1 1 1) plane, a (1 {overscore (1)} 1) plane, a ({overscore (1)} {overscore (1)} 1) plane and a ({overscore (1)} 1 1) plane is formed near the center of the concave portion by using the silicon process. Among these slanted faces, a (1 1 1) outer face and a (1 1 1) inner face are determined to be reflecting mirror surfaces. The semiconductor laser elements respectively are fixed on small protrusions formed on the concave portion, and a photodetector for receiving light beams L &prime; and L &prime; returning from an optical disc is disposed on a top face of the protrusion.

Semiconductor device and optical pickup device

A substrate containing a compound semiconductor layer comprises a substrate layer , a first semiconductor layer formed on the substrate layer , and a second semiconductor layer made of a Group III nitride-based compound semiconductor formed on the first semiconductor layer . The semiconductor layer is provided with a plurality of pores . Thus, a compound semiconductor layer containing a Group III nitride-based compound semiconductor with excellent surface planarity and crystallinity can be provided, as well as a method for manufacturing the same, and a semiconductor device using the same.

Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same

First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH,, TMG, and hydrogen for carrier are supplied at the rates of 10 &mgr;mol/min., 2.5 L/min., and 2 L/min., respectively to the semiconductor substrate at a temperature of 1090&deg; C. by using MOVPE, thereby a buffer layer which consists of single crystal AlN and has a thickness of 15 nm being grown on the main surface of the semiconductor substrate. After lowering the temperature to 800&deg; C., TMA, TMG, TMI, and NH,are supplied at the rates of 0.2 &mgr;mol/min., 2 &mgr;mol/min., 20 &mgr;mol/min., and 5 L/min., respectively, thereby a single crystal layer which consists of AlGaInN being grown on the buffer layer.

Method of manufacturing a semiconductor and a semiconductor light-emitting device

Gallium nitride compound semiconductor light emitting device and process

On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.

Methods of manufacturing semiconductor, semiconductor device and

An episulfide which has an alicyclic, aromatic or heterocyclic skeleton and has two or more moieties represented by the formula ##STR1## wherein X is S or O, and S is in an amount of 50% or more, on the average, of the total of S and O constituting a three-membered ring. A cured material obtained by polymerizing this episulfide compound is a desirable optical material for various uses, particularly as a lens material for spectacles.

Episulfide compound

A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.

Method of manufacturing a semiconductor light-emitting device

A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.

Semiconductor laser device

A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.

Semiconductor laser and production method thereof

According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0&lt;x&lt;0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.

Semiconductor light-emitting device and production method thereof, and

A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x&lt;1, 0.ltoreq.y&lt;1) and a quantum well layer made of Zn.sub.1-z Cd.sub.z Se (0.ltoreq.z&lt;1) which is interposed between the first and the second light guiding layers, the light-emitting layer being interposed between the first and the second cladding layers; and a burying layer which is made of ZnMgSSe lattice-matching with the semiconductor substrate and formed on sides of the second cladding layer.

Semiconductor laser

Growing community of inventors

Osaka, Japan

Nobuyuki Uemura