Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Nobuyuki Toda

Takeshi Yamamoto

Kazuaki Yamaura

Shinji Kawahara

Hiroyoshi Kitahara

Naozumi Terada

Yu Nakane

Takashi Ishikawa

Kensuke Yasuda

According to the present embodiment, a semiconductor device includes a semiconductor substrate, a memory transistor, and a MOS transistor. The memory transistor includes at least a first silicon dioxide film and a first gate electrode positioned on the semiconductor substrate in order. The MOS transistor includes a second silicon dioxide film and a second gate electrode positioned on the semiconductor substrate in order. Any bird's beak is not generated in at least either the first silicon dioxide film or the first gate electrode of the memory transistor.

Semiconductor device and manufacturing method of semiconductor device

Method of forming memory transistor with sacrificial polysilicon layer

A semiconductor device includes a semiconductor layer of a first conductivity type, a first semiconductor portion of a second conductivity type provided in the semiconductor layer, first and second conductive members, each having an upper end reaching an upper surface of the semiconductor layer and a lower end connected to the first semiconductor portion, and first and second insulating films covering side surfaces of the first and second conductive members, respectively. A length from the upper end to the lower end of the first conductive member is greater than a total of a length of the first conductive member, a distance between the first conductive member and the second conductive member, and a length of the second conductive member in a direction from the first conductive member toward the second conductive member that is parallel to the upper surface of the semiconductor layer.

Semiconductor device with conductive members that extend from a semiconductor portion to an upper surface of a semiconductor layer

A semiconductor device includes: a semiconductor substrate; a first transistor provided at an upper surface of the semiconductor substrate; and a first capacitor provided above the first transistor and connected to a gate of the first transistor. A tunnel current is able to flow between the gate and the semiconductor substrate.

Semiconductor device

A light detection device is disclosed. A first cell and a second cell are set in the light detection device. The first cell and the second cell are mutually adjacent. The device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer being of a second conductivity type; a first member provided between the first cell and the second cell; a second member provided between the first member and the first cell; and a third member provided between the first member and the second cell. The first to third members are made of a material different from the first semiconductor layer and the second semiconductor layer.

Light detection device

A semiconductor device includes a semiconductor substrate, an insulating film provided on the semiconductor substrate, a first element disposed at least in a lower layer portion of the insulating film, a second element disposed at least in the lower layer portion of the insulating film, and a hydrogen barrier member provided on the semiconductor substrate. The hydrogen barrier member is made from a material transmitting hydrogen less easily than does a material of the insulating film. The hydrogen barrier member and the semiconductor substrate surround the second element. The hydrogen barrier member does not surround the first element.

Growing community of inventors

Kawasaki Kanagawa, Japan

Nobuyuki Toda