Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

International Superconductivity Technology Center

Central Research Institute of Electric Power Industry

Kabushiki Kaisha Toshiba

The Furukawa Electric Co., Ltd.

Tohoku Electric Power Company, Inc.

Renesas Eastern Japan Semiconductor, Inc.

Hokkaido Electric Power Company, Inc.

Nobuyuki Sugii

Hiroyuki Yoshimoto

Shinya Yamaguchi

Kiyokazu Nakagawa

Ryuta Tsuchiya

Masanobu Miyao

Yoshinobu Kimura

Tetsufumi Kawamura

Katsuyoshi Washio

Tetsuya Ishimaru

Shiro Kamohara

Yasushi Yamagata

Yoshihiro Wakisaka

Takashi Ishigaki

Takumi Hasegawa

Yusuke Morita

Shinichiro Kimura

Shinichi Saito

Shuntaro Machida

Noriyuki Haga

Masao Kondo

Keiji Watanabe

Digh Hisamoto

Daisuke Ryuzaki

Kazuhiro Ohnishi

Ryohei Matsui

Kazuki Watanabe

Isao Yoshida

Masatoshi Morikawa

Katsuya Oda

Takahiro Onai

Hisao Yamauchi

Naoko Ushio

Michiharu Ichikawa

Ryotaro Kawahara

Yasuichi Kondo

Wataru Hirasawa

Seang-kee Park

Toshiaki Iwamatsu

Tomonori Sekiguchi

Isao Suzumura

Masahiro Aoki

Toshiki Sugawara

Masaharu Kinoshita

Katsuya Miura

Kiyoshi Yamamoto

Kazuyuki Hamada

Masayoshi Ishibashi

Takeshi Sakurai

Hirohiko Sagawa

Tsuneya Kurihara

Misuzu Sagawa

Makoto Miura

Seiji Adachi

Seong-Kee Park

Koichi Kubo

Aki Takei

Takuya Maruizumi

Yuji Yaegashi

Mitsunobu Wakata

Hirotsugu Takizawa

Shingo Kirita

Motoki Tajima

Kohichi Kubo

Kiyotaka Matsuura

Masahiko Shimada

A pressure sensor device, a method for manufacturing the pressure sensor device, and a work management system mitigating a degree of a false detection is presented. The pressure sensor device detecting pressure includes a flexible substrate base material having flexibility; a comb-teeth shape electrode having an exposed metal surface formed in a predetermined area on the flexible substrate base material; and a pressure-sensitive material that is provided on the comb-teeth shape electrode, varies in a resistance value depending on an amount of a load, and has a curvature in a static state.

Pressure sensor device, method for manufacturing the same, and work management system using the same

A work detection determination system performs detection determination on a work with high accuracy. The work detection determination system includes a glove that is worn on a hand of a worker and includes a microphone detecting a work sound of a hand operation in which the hand works on a work target through a contact of the hand with the work target, a pressure sensor detecting a pressure of a work of the hand operation, a motion sensor detecting a motion of the hand operation, and a transmitting unit transmitting a sound signal of the microphone, a pressure signal of the pressure sensor, and a motion signal of the motion sensor; a receiving unit that receives the sound signal, the pressure signal, and the motion signal transmitted from the transmitting unit; a work determination unit that performs detection determination of a work content of the worker by using the sound signal, the pressure signal, and the motion signal; and a notification unit that notifies a determination result of the work determination unit.

Work content detection determination device, work content detection determination system, and wearable sensor embedded glove

An operation motion is accurately determined in an operational information management system. The system includes a motion verification portion that combines and verifies plurality of pieces of sensor information and recognizes a specific body motion, a signal determination portion that determines whether an operation content of an operator is correctly performed based on the body motion recognized by the motion verification portion, and a report portion that reports a determine result of the signal determination portion.

Operational information management system and wearable sensor

Provided is a digitalization system capable of digitalizing the skills of delicate work. This digitalization system comprises a first sensor mounted on a work tool and which detects a deformation of the work tool when the work tool is pressed against a work target, a second sensor which detects a force applied to the work target or a force applied to the work tool when the work tool is pressed against the work target, and a computer which calculates an angle of a corner formed with the work tool and the work target based on sensor values acquired with the first sensor, and calculates a force applied to the work target when the work tool is pressed against the work target based on sensor values acquired with the second sensor.

Delicate work tool digitalization system

To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Semiconductor integrated circuit device and wearable device

A sensor data correction system, includes: a standard motion mechanism unit for performing a standard motion of a wearable sensor; a determination unit calculating a relationship between first sensor data that is sensed by a first wearable sensor provided with the standard motion mechanism unit and second sensor data that is sensed by a second wearable sensor provided with the standard motion mechanism unit; and a correction unit correcting the first sensor data or the second sensor data, on the basis of the relationship that is calculated by the determination unit.

Sensor data correction system

The present invention comprises: a wearable sensor that is worn by a worker, the wearable sensor having a sensor that receives sensor data from a sensing object, and a transmitter that transmits to a terminal the sensor data received by the sensor; and a computer that determines operation content for the worker on the basis of the sensor data received from the wearable sensor, and outputs the result of the determination to a display unit.

Work information management system and work information management method

Semiconductor integrated circuit device with SOTE and MOS transistors

One preferable aspect of the present invention is a state detecting system which detects a state of a machine device based on a detection signal from a detecting element provided to the machine device, and is the state detecting system which includes a non-normal time rate detecting unit which detects a rate or a value as a non-normal time rate, the rate being a rate of an integration value of a time during which an amplitude of the detection signal exceeds a predetermined normal amplitude within a predetermined time, and the value being physically equivalent to the rate.

State detecting system and state detecting method

For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

MEMS manufacturing method and MEMS manufacturing apparatus

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

Device processing method and device processing apparatus

First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

Microstructure processing method and microstructure processing apparatus

Growing community of inventors

Tokyo, Japan

Nobuyuki Sugii