Mitsubishi Materials Corporation

Symetrix Corporation

Stmicroelectronics(tours) Sas

Japan Advanced Institute of Science and Technology

Mitusbishi Materials Corporation

Stmicroelectronics (rousset) Sas

Nobuyuki Soyama

Hideaki Sakurai

Toshihiro Doi

Katsumi Ogi

Toshiaki Watanabe

Hiroto Uchida

Jun Fujii

Takashi Noguchi

Carlos Alberto Paz De Araujo

Larry D McMillan

Michael C Scott

Kensuke Kageyama

Tadashi Yonezawa

Guillaume Guegan

Tsutomu Atsuki

Joseph D Cuchiaro

Go Sasaki

Tatsuya Shimoda

Kenzo Nakamura

Yoshinori Takayama

Kazunori Igarashi

Jeffrey W Bacon

Atsushi Itsuki

Yuzuru Takamura

Hideyuki Hirakoso

Jinwang Li

Akio Yanagisawa

Shingo Okamura

Akihiko Mieda

Yuki Tagashira

Reijiro Shimura

Gary F Derbenuick

A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, &#x3b2;-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.

Piezoelectric PTZT film, and process for producing liquid composition for forming said piezoelectric film

A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.

Composition for forming Ce-doped PZT-based piezoelectric film

The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200&#xb0; C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5&#xb0; C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2&#xb0; C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500&#xb0; C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.

Method for forming PZT ferroelectric film

A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.

Composition for forming Mn-doped PZT-based piezoelectric film and Mn-doped PZT-based piezoelectric film

A ferroelectric film a plurality of fired films is provided. E each of the plurality of fired films is made of metal oxide in a perovskite structure including Pb, Zr, and Ti, a total content of Li, Na, and K in the each of the plurality of fired films is 3 mass ppm or less, and the total content of Li, Na, and K on one surface of each of the plurality of fired films is 5 times or more of the total concentration of Li, Na, and K on other surface of each of the plurality of fired films.

Ferroelectric film and method of producing same

A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Composition for forming Mn and Nb co-doped PZT-based piezoelectric film

A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrodeformed on a substrate, prebaking the composition, and baking the composition to be crystallized and to thereby form a crystallization promoting layerhaving a thickness 45 to 90 nm thereon; coating a composition for forming a PNbZT-based ferroelectric film, containing 4 to 10 at % of Nb in 100 at % of all the perovskite B site atoms (Zr, Ti) contained in the composition, on the formed crystallization promoting layerto form a coating filmof PNbZT thereon; and pre-baking the coating filmand then baking the coating filmto be crystallized and to thereby form a PNbZT ferroelectric thin film on the lower electrode

Method of forming PNbZT ferroelectric thin film

A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200&#xb0; C. to 300&#xb0; C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400&#xb0; C. to 500&#xb0; C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.

Composition for forming ferroelectric thin film, and method for manufacturing same

A residual stress in a PZT type ferroelectric filmformed on a substrate bodyby a sol-gel process is &#x2212;14 MPa to &#x2212;31 MPa, and the ferroelectric filmis crystal oriented in a (100) plane.

Silicon substrate having ferroelectric film attached thereto

This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.

Ferroelectric thin film-forming sol-gel solution

A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: BaSrTiO(wherein 0.2&#x3c;x&#x3c;0.6 and 0.9&#x3c;y&#x3c;1.1), the liquid composition is an organic metal compound solution in which a raw material for composing the composite metal oxide A and a raw material for composing the composite oxide B are dissolved in an organic solvent at a proportion having a metal atom ratio expressed by the formula shown above and a molar ratio between A and B in the range of 0.001&#x2266;B/A&#x3c;0.15.

Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9&#x3c;x&#x3c;1.3, 0&#x2266;y&#x3c;0.1, and 0&#x2266;z&#x3c;0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3&#x2266;n&#x2266;7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof

A LaNiOthin film having extremely few voids is uniformly formed. Provided is a LaNiOthin film-forming composition for forming a LaNiOthin film. It includes: a LaNiOprecursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes &#x3b2;-diketones, &#x3b2;-ketones, &#x3b2;-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150&#xb0; C. to 300&#xb0; C. and a surface tension of 20 to 50 dyn/cm. The LaNiOprecursor content is 1 to 20 mass % with respect to 100 mass % of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiOprecursors. The second organic solvent content is 5 to 20 mass % with respect to the composition.

LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same

A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.

PZT-based ferroelectric thin film and method of forming the same

To provide a ferrite thin film-forming composition material that is a composition material for forming a ferrite thin film by using the sol-gel method which can form a thin ferrite thin film having a uniform thickness and, furthermore, has excellent long-term storage stability, a method of forming a ferrite thin film using the above composition material, and a ferrite thin film formed by using the above method. A ferrite thin film-forming composition material is a composition material for forming a NiZn ferrite, CuZn ferrite, or NiCuZn ferrite thin film by using a sol-gel method, in which the composition material is formed by dissolving metallic raw materials in a solvent including acetonitrile, and the fraction of acetonitrile is 30 mass % to 60 mass % with respect to 100 mass % of the composition material.

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Naka-gun, Japan

Nobuyuki Soyama