Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Nobuyuki Otsuka

Yasushi Matsui

Masato Ishino

Masahiro Kitoh

Shigeo Yoshii

Akihiko Ishibashi

Yoshiaki Hasegawa

Gaku Sugahara

Ayumu Tsujimura

Toshiya Yokogawa

Kiyoshi Ohnaka

Koichi Mizuno

Yasutoshi Kawaguchi

Yuji Kudoh

Masahiro Kito

Asamira Suzuki

Daisuke Ueda

Ryoko Miyanaga

Yuzaburo Ban

Kenji Mizutani

Kenji Harafuji

Toshitaka Shimamoto

Shinji Nakamura

Shuichi Nagai

Yoshihiro Mori

Manabu Yanagihara

Yuka Yamada

Kiyoshi Morimoto

Hiroshi Kutsumi

Yuichi Inaba

Hitoshi Taya

Toshimitsu Morizane

Nobuo Kitao

A power conversion method including: receiving, by a pair of input terminals, an input voltage in which is a single-phase AC voltage; designating a first target voltage ref, a second target voltage ref, and a third target voltage refrespectively representing consecutive target values of first-phase, second-phase, and third-phase output voltages forming a three-phase AC voltage; and cyclically connecting and disconnecting (i) the input terminals and first output terminals at a duty cycle corresponding to |ref/in| when an instantaneous value of |in| is greater than an instantaneous value of |ref|, (ii) the input terminals and second output terminals at a duty cycle corresponding to |ref/in| when the instantaneous value of |in| is greater than an instantaneous value of |ref|, and (iii) the input terminals and third output terminals at a duty cycle corresponding to |ref/in| when the instantaneous value of |in| is greater than an instantaneous value of |ref

Power conversion apparatus, power conversion method, motor system, and three-phase motor

An efficient and reliable power conversion method for converting an input voltage which is a single-phase AC voltage into output voltages forming a two-phase AC voltage includes: receiving an input voltage; designating, as a first target voltage representing consecutive target values of a first-phase output voltage and a second target voltage representing consecutive target values of a second-phase output voltage, AC voltages forming a two-phase AC voltage and having (i) an amplitude 1/&#x221a;2 times smaller than an amplitude of the input voltage, and (ii) phase differences of +45 degrees and &#x2212;45 degrees relative to the input voltage; and designating a frequency other than a frequency twice a frequency of the input voltage, as a frequency of the first target voltage and the second target voltage.

Power conversion apparatus, power conversion method, and motor system

A device that supports an operator in checking an operation of an electronic circuit mounted on a board includes the following units. A waveform obtainment unit obtains a measured waveform as a signal waveform of a voltage or current measured by the operator bringing a probe into contact with the board. A similarity calculation unit calculates a similarity between the measured waveform and each of simulated signal waveforms which are signal waveforms of a voltage or current at respective nodes on the electronic circuit and are obtained by simulating the operation of the electronic circuit. A position determination unit determines, based on node information indicating positions of the nodes, a node position on the electronic circuit which corresponds to a simulated signal waveform having a maximum similarity. A notification unit notifies the operator of the node position determined on the electronic circuit.

Operation check support device and operation check support method

A power conversion method including: receiving an input voltage which is a single-phase AC voltage; designating a first target voltage and a second target voltage respectively representing consecutive target values of a first-phase output voltage and a second-phase output voltage which form a two-phase AC voltage; cyclically connecting and disconnecting a pair of input terminals and a pair of first output terminals at a duty cycle corresponding to a ratio |ref/in| during a time period in which an instantaneous absolute value of the input voltage is greater than an instantaneous absolute value of the first target voltage; and cyclically connecting and disconnecting the pair of the input terminals and a pair of second output terminals at a duty cycle corresponding to a ratio |ref/in| during time periods in which the instantaneous absolute value of the input voltage is greater than an instantaneous absolute value of the second target voltage.

Power conversion apparatus, power conversion method, motor system, and two-phase induction motor

A gate drive circuit includes: an input port for receiving a control signal; an output port; a capacitor connected to the output port; a modulation unit which generates (i) a first modulated signal indicating timing of a first logical value of the control signal and (ii) a second modulated signal indicating timing of at least a second logical value of the control signal; a first electromagnetic resonance coupler which wirelessly transmits the first modulated signal; a second electromagnetic resonance coupler which wirelessly transmits the second modulated signal; a first rectifier circuit which generates a first demodulated signal by demodulating the first modulated signal, and outputs the first demodulated signal to the output port; and a second rectifier circuit which generates a second demodulated signal by demodulating the second modulated signal, and outputs the second demodulated signal to the output port.

Gate drive circuit

To develop a motor which can directly drive a brushless motor using a conventional circuit for an inverter without smoothing circuit and a circuit for a matrix converter that are for a brushed motor that operates on single-phase 100 V. Magnetic cores are attached to a motor shaft to increase inertial force. A magnetic-drive-pulsation motor which modulates torque is realized using force of attraction and repulsion generated by outer magnets and magnetic cores. The magnetic-drive-pulsation motor can be driven using the inverter and the matrix converter on single-phase 100 V power supply.

Magnetic-drive-pulsation motor

To provide a semiconductor equipment having high heat-transfer effect and breakdown voltage, and a method of manufacturing the same. The semiconductor equipment includes: a sealed container; a stem connected to the sealed container via a stem peripheral portion; and a semiconductor chip mounted on a top surface of the stem, inside the sealed container. The semiconductor chip is electrically connected to a lead provided to the stem, the stem peripheral portion, which is of a material that is different from the material of stem and the same as the material of the sealed container, is bonded along a periphery of the stem, and the sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether.

Semiconductor equipment and method of manufacturing the same

A server, which transmits phonetic-sound information to a plurality of client machines and reproduces the transmitted phonetic-sound information, includes a storage unit for storing a plurality of pieces of voiced phonetic-sound information whose contents are voices of a plurality of speakers in a conversation made up of the voices of the plurality of speakers. The server also includes a timing determining unit for determining reproduction timing of the plurality of pieces of voiced phonetic-sound information, and a transmitting unit for transmitting the voiced phonetic-sound information which is applicable to each client machine, so that its reproduction is executed in the reproduction timing determined by the timing determining unit.

Phonetic-sound providing system, server, client machine, information-provision managing server and phonetic-sound providing method

A ballistic semiconductor device of the present invention comprises a n-type emitter layer (), a base layer () made of n-type InGaN, a n-type collector layer (), an emitter barrier layer () interposed between the emitter layer () and the base layer () and having a band gap larger than that of the base layer (), and a collector barrier layer () interposed between the base layer () and the collector layer () and having a band gap larger than that of the base layer (), and operates at 10 GHz or higher.

Ballistic semiconductor device

The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type compound semiconductor in this order; a quantum dot barrier layer disposed between the emitter layer and the base layer; a collector electrode, a base electrode and the emitter layer all connected to an emitter electrode; the quantum dot barrier layer having a plurality of quantum dots being sandwiched between first and second barrier layers from the emitter layer side and the base layer side, respectively and each having a portion that is convex to the base layer; a base layer side interface in the second barrier layer, and collector layer side and emitter layer side interfaces in the base layer having curvatures that are convex to the collector layer corresponding to the convex portions of the quantum dots.

Semiconductor device

The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

A semiconductor light emitting device of the present invention comprises a n-type InP substrate (), and a stripe structure () formed in the stripe shape on the n-type InP substrate () and comprised of a n-type InP lower cladding layer (), an active layer () having a resonator in a direction parallel to the n-type InP substrate (), and a p-type InP upper cladding layer (). The stripe structure () has a photonic crystal structure () with concave portionsarranged in rectangular lattice shape, and the direction in which the concave portions () of the photonic crystal structure () are arranged corresponds with a resonator direction. A stripe-shaped upper electrode () is formed on the stripe structure () to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate ().

Semiconductor light emitting device and method of fabricating the same

The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.

Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

A plasma oscillation switching device of the present invention comprises semiconductor substrate; first barrier layerthat is composed of a III-V compound semiconductor and formed on the substrate; channel layerthat is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layerthat is composed of a III-V compound semiconductor and formed on the channel layer; source electrode, gate electrodeand drain electrodeprovided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer, the second barrier layer includes p-type diffusion layer, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer

Growing community of inventors

Kawanishi, Japan

Nobuyuki Otsuka