Canon Kabushiki Kaisha

Other

Applied Materials Japan Inc.

Canon Kabushiki Kaisha/applied Materials Japan Inc.

Nobuyuki Okamura

Atsushi Yamagami

Tadashi Okamoto

Makoto Kameyama

Satoshi Takaki

Tadashi Shibata

Haruhiro Harry Goto

Tadahiro Ohmi

Satoshi Takai

An apparatus for producing a probe carrier in which ambient humidity for a plurality of nozzles of a liquid ejection device for ejecting droplets of solutions containing probes to the surface of a carrier is controlled to 50% or more, preferably 60% or more. A part of solution supply passages to the plurality of nozzles is constructed from gas permeable membranes permitting gas-liquid separation under reduced pressure. These gas permeable membrane portions are gathered and altogether placed under reduced pressure to remove air bubbles from the respective solutions supplied to the plural nozzles and decrease the amount of a dissolved gas, which causes air bubbles to be generated.

Apparatus for producing probe carrier

A method for appropriately managing the quality and distribution of a probe carrier. Probe carriers manufactured by a probe carrier manufacturing apparatus having ejecting portions for ejecting probe solutions, each containing a probe, which can be specifically coupled with a target substance, for applying the probe solution on a carrier, and a plurality of probe tanks storing mutually different probe solutions for supplying ejecting portions. Each probe tank is labeled with the bar-code. The labeled bar-code is read by the bar-code reader. On the basis of the read bar-code, the probe solution stored in the probe tank is identified. On the other hand, the probe tank is mounted on the ejecting portion.

Probe carrier management method, probe carrier manufacturing apparatus and probe carrier managing apparatus

Management method of probe carrier, probe carrier manufacturing apparatus and probe carrier managing apparatus

A carrier having indexes in a probe non-fixing region is used and solutions containing probes are applied to respective specific positions on the carrier by referring to said indexes and fixed. The position of a target compound that is specifically bonded to a probe fixed to a probe carrier manufactured by a method according to the invention can be accurately and quickly detected by referring to the indexes.

Probe carrier, probe fixing carrier and method of manufacturing the same

To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

Plasma processing method

Plasma processing apparatus

Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with a cathode electrode inside and a high-frequency power in the range of 50 to 300 MHz is supplied to the cathode electrode, whereby ions of the stock gas with energy of 40 or more eV are made to hit against a substrate, thereby forming a deposited film thereon.

Process for forming high-quality deposited film utilizing plasma CVD

A plasma processing apparatus has a vacuum container which contains a pair of electrodes for causing a discharge for generating a plasma, and a shielding plate for separating a plasma processing region including a space between the electrodes from a region in contact with the inner wall of the vacuum container in such a manner that both the regions communicate with each other. The apparatus includes a means for causing a pressure difference between the plasma processing region and the region in contact with the inner wall of the vacuum container.

Plasma CVD process using a very-high-frequency and plasma CVD apparatus

In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.

Method for forming a functional deposited film by bias sputtering

A substrate-heating mechanism has a heat source for heating a substrate for heating a substrate face side reverse to a film formation face in a film deposition on the film formation surface of the substrate held on a substrate holder in a vacuum chamber, the mechanism comprises a second vacuum chamber for maintaining vacuum the substrate face reverse to the film formation face.

Substrate heating mechanism

A plasma processing apparatus comprises: a first electrode connectable with a plasma generating power source; a second electrode capable of supporting a substrate to be subjected to a plasma-involving surface treatment; a third electrode enclosing a space between the first and second electrodes, all the electrodes being positioned in an evacuatable chamber; and potential control means for controlling the potential of the third electrode.

Growing community of inventors

Kawasaki, Japan

Nobuyuki Okamura