Toshiba Memory Corporation

Nobuyuki Ogata

Daisuke Watanabe

Tatsuya Kishi

Toshihiko Nagase

Masahiko Nakayama

Tsuneo Inaba

Kazuya Sawada

Hisanori Aikawa

Masaru Toko

Young Min Eeh

Jyunichi Ozeki

A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a current level of the second pulse is different from a current level of the first pulse.

Magnetoresistive memory device with different write pulse patterns

According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.

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Kanagawa, Japan

Nobuyuki Ogata