Renesas Technology Corp.

Renesas Electronics Corporation

Seiko Epson Corporation

Hitachi High-tech Corporation

Nobuyuki Mise

Yukimune Watanabe

Shinji Migita

Noriyuki Sakuma

Yoshitaka Sasago

Aritoshi Sugimoto

Takahisa Eimori

Akira Toriumi

Seiichi Watanabe

Takashi Tsutsumi

Takeo Matsuki

Tetsu Morooka

Munenori Degawa

The present invention aims to provide a fuel battery system improved in reliability by accurately detecting when a fuel electrode gas or an air electrode gas has leaked. A fuel battery cell according to the present invention includes a first electrode, an electrolyte membrane, and a second electrode which are layered on a support substrate. Further, at least any one of the first electrode, the electrolyte membrane, and the second electrode is electrically isolated by an insulating member to form a first region and a second region. The insulating member is disposed at a position where the insulating member does not overlap with an opening portion of the support substrate (refer to FIG.).

Fuel battery cell, fuel battery system, leak detection method

Provided is a highly reliable fuel cell that improves power generation efficiency of the fuel cell and that is less likely to cause damage to an electrode and an electrolyte film. The fuel cell includes a support substrate () having a region in which a support portion having a mesh-like shape in a plan view is provided, a first electrode 4 on the support substrate, an electrolyte filmon the first electrode, and a second electrodeon the electrolyte film. The first electrode includes a first thin film electrodeA formed in a manner of covering at least the region, and a first mesh-like electrodeB connected to the first thin film electrode and provided corresponding to the support portion. The first mesh-like electrodeB has a film thickness larger than that of the first thin film electrode and has a mesh-like shape in a plan view.

Fuel cell

A CMOS semiconductor device having an n-type MOSFET and a p-type MOSFET, comprising: a gate electrode of the n-type MOSFET having a first insulation layer composed of a high-k material, and a first metal layer provided on the first insulation layer and composed of a metal material; and a gate electrode of the p-type MOSFET having a second insulation layer composed of a high-k material, and a second metal layer provided on the second insulation layer and composed of a metal material, wherein the first insulation layer and the second insulation layer are composed of the different high-k materials, and the first metal layer and the second metal layer are composed of the same metal material.

CMOS semiconductor device and method for manufacturing the same

A gate insulating film is formed on a substrate. Next, a gate electrode film is formed on the gate insulating film. A mask film is formed on a portion of the gate electrode film. The gate electrode film is selectively removed by etching using the mask film as a mask. A gate sidewall film is formed so as to be in contact with the lateral surfaces of the mask film and the gate electrode film. The mask film is formed of a laminated film in which at least a first film, a second film and a third film are laminated in this order. The second film has a higher etching selectivity ratio than that of the third film with respect to the gate sidewall film. The third film has a higher etching selectivity ratio than that of the second film with respect to the gate electrode film.

Method of manufacturing semiconductor device, and semiconductor device

A base insulating film containing hafnium and oxygen is formed on a silicon oxide (SiO) film formed on a main surface of a substrate. Subsequently, a metal thin film thinner than the base insulating film and made of only a metal element is formed on the base insulating film, and a protective film having humidity resistance and oxidation resistance is formed on the metal thin film. Then, by diffusing the entire metal element of the metal thin film into the base insulating film in a state of having the protective film, a mixed film (high dielectric constant film) thicker than the silicon oxide film and having a higher dielectric constant than silicon oxide and containing hafnium and oxygen of the base insulating film and the metal element of the metal thin film is formed on the silicon oxide film.

Method of manufacturing semiconductor device and semiconductor device

A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.

Semiconductor device and manufacturing method of the semiconductor device

A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.

Method of nickel disilicide formation and method of nickel disilicate source/drain formation

After forming a first gate electrode and a second gate electrode on a semiconductor substrate, a silicon oxide film is formed to cover an n-channel MISFET forming region, and a p-channel MISFET forming region is exposed. Subsequently, after a first element supply film made of, for example, an aluminum oxide film is formed on the whole surface of the semiconductor substrate, a heat treatment is performed. By this means, a high-concentration HfAlO film and a low-concentration HfAlO film are formed by diffusing aluminum into the first insulating film just below the second gate electrode. Thereafter, by using a magnesium oxide film as a second element supply film, magnesium is diffused into the first insulating film just below the first gate electrode, thereby forming a high-concentration HfMgO film and a low-concentration HfMgO film.

Manufacturing method of semiconductor device

In a MIS transistor of which gate length is 10 nm or less, a gate insulator comprising a silicon oxide film formed on a silicon substrate and a high-k film formed on the silicon oxide film has a nitrided region including more nitrogen at the lateral side than at the central side in the gate-length direction, and including more nitrogen at the upper side than at the lower side in the film thickness direction. The reliability and characteristics of a MIS transistor using a gate insulator including a high-k (high dielectric constant) film is enhanced.

Growing community of inventors

Tokyo, Japan

Nobuyuki Mise