Panasonic Intellectual Property Management Co., Ltd.

Nobuyuki Matsuzawa

Masaru Sasago

Hideyuki Arai

Jun'ichi Naka

Daisuke Kubo

Miyoko Masuda

Doyu Hachisu

To provide a fused hetero 5-membered ring molecule having further sufficiently high hole mobility. Disclosed is a fused hetero 5-membered ring molecule having, in one molecule, eight aromatic rings including three or five hetero 5-membered rings, and the eight aromatic rings having one or two naphthalene structures. The three or five hetero 5-membered rings are each independently selected from the group consisting of a thiophene ring, a selenophene ring, and a furan ring.

Fused hetero 5-membered ring molecule, p-type semiconductor film and electronic device

To provide a fused thiophene molecule having further sufficiently high hole mobility. Disclosed is a fused thiophene molecule that has seven aromatic rings containing three thiophene rings in one molecule and in which the seven aromatic rings have one or two naphthalene structures. And, semiconductor devices including a layer using the fused thiophene molecule are disclosed.

Fused thiophene molecule and p-type semiconductor film and electronic device

A power storage device includes an electricity storage element, a case, and a sealing member which includes an elastic member. The elastic member contains an elastic polymer and a hindered phenol compound. The hindered phenol compound having a phenol skeleton includes a first hindered group and a second hindered group. The first hindered group is bonded to a first substitution site of the phenol skeleton, and the second hindered group is bonded to a second substitution site of the phenol skeleton. Each of the first substitution site and second substitution site is adjacent to a substitution site of the phenol skeleton to which a phenolic hydroxy group is bonded. One of one or more tertiary carbon atoms in the first hindered group and one of one or more tertiary carbon atoms in the second hindered group are bonded to the first substitution site and the second substitution site, respectively.

Power storage device comprising an electricity storage element, a case with an opening, and a sealing member sealing the opening

Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

Heterofullerene and n-type semiconductor film using same, and electronic device

A p-type semiconductor film including heterofullerene having a further sufficiently high hole mobility is provided. The p-type semiconductor film contains heterofullerene in which n+r number (where n and r are both positive odd numbers) of carbon atoms constituting a fullerene are substituted by n number of boron atom or atoms and r number of nitrogen atom or atoms.

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Osaka, Japan

Nobuyuki Matsuzawa