Sharp Kabushiki Kaisha Corporation

Nobuyuki Matsumoto

Kazuhiko Shirakawa

Naoki Takahashi

Takao Hasegawa

Yoshinori Motouchi

Minoru Ogawa

An amplifier GaAs MMIC for microwave band applications includes a ground electrodehaving a via hole groupcomposed of three via holesfilled with plated metalsthat are formed adjacently. The interaction thereby generates high frequency electromagnetic bonding, which reduces the ground inductance. According to the MMIC, the ground inductance of the via hole may be reduced while decrease of a strength and increase of a size being restrained.

Semiconductor device with via hole group generating high frequency electromagnetic bonding, manufacturing method thereof, and monolithic microwave integrated circuit

The amplifier semiconductor element of this invention includes a field effect transistor of which a threshold voltage V.sub.th has a predetermined relationship with an operating voltage.

Amplifier semiconductor element, method for fabricating the same, and

A preparation method of a gate electrode for semiconductor device which comprises forming a plurality of specific resist layers sensitive to an electron beam over a substrate through a silicon nitride film, subjecting the resist layers to an electron beam lithography to obtain an opening having a specific configuration at the opening portion, etching the silicon nitride film through the opening to form an opening in the silicon nitride film, etching the substrate through the opening of the silicon nitride film to form a cavity in the substrate, and forming a metal member on the substrate in the cavity in accordance with a metal-deposition and lift-off process to obtain the gate electrode in a projected shape.

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Nara, Japan

Nobuyuki Matsumoto