Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Nobuyuki Kuboi

Takashi Kinoshita

Tetsuya Tatsumi

Shoji Kobayashi

Yoshiki Ebiko

Shinya Yamakawa

Yukio Kaneda

Yoshio Goto

Masanaga Fukasawa

Kazuhiro Hongo

Masanaga Fukusawa

A solid-state imaging device () according to the present disclosure includes a photoelectric conversion portion () including a first electrode (), a photoelectric conversion layer () electrically connected to the first electrode (), and a second electrode () provided on a surface on a light incidence side of the photoelectric conversion layer (). The photoelectric conversion layer () has a protrusion region () that protrudes from the second electrode () when seen in a plan view.

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment

An enzyme sensor including a pair of electrodes, an electron transfer layer held between the pair of electrodes, and an electron generating capsule in which a membrane containing at least a substrate of an enzyme to be detected encloses at least one or more kinds of enzymes other than the enzyme to be detected, the electron generating capsule being in contact with the electron transfer layer.

Enzyme sensor and electronic device

A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber.

Dry etching equipment and method for producing semiconductor device

A film formation simulation method that enables prediction of the film quality of a film formed on a macro scale is provided. A film formation simulation method including: calculating a position at which each of raw material particles that enter a film formation surface migrates on the film formation surface, on a basis of an activation energy of a surface of the film formation surface, by using a computing device; calculating information regarding a defect of a film including the raw material particles on the film formation surface, on a basis of migration positions of the raw material particles of a predetermined amount, each time the migration positions of the raw material particles of the predetermined amount are calculated; and calculating an activation energy of a surface of the film including the raw material particles, on a basis of the information regarding the defect of the film. The activation energy of the surface of the film calculated immediately before is used in calculation of the migration position of each of the raw material particles.

Film formation simulation method, program, and semiconductor processing system

A state control apparatus including: an acquiring unit configured to acquire a state index indicating a state of target feeling based on biological information corresponding to the target feeling which is feeling of a target to be guided, the biological information being detected from a guide target whose state of feeling is to be guided; and a state control unit configured to determine a feeling guiding medium to be used for guiding the state of the target feeling based on the acquired state index and pattern information which is associated with the feeling guiding medium for guiding the state of the target feeling and which indicates a pattern of temporal change of the state index so that the state of the target feeling becomes a predetermined set state, and control the state of the target feeling of the guide target by performing processing relating to the determined feeling guiding medium. The biological information includes information indicating a detection result of an enzyme.

State control apparatus, state control method, and state control system

[Object] To predict the damage distribution of a workpiece caused by ions and light from plasma more accurately within a practical computation time. [Solution] Provided is a damage prediction method including: using an operation apparatus to calculate, from fluxes of ions and light generated by plasma, fluxes of ions and light propagated through a pattern of a workpiece including a processing object, on the basis of the pattern; calculating, from the fluxes of ions and light propagated through the pattern, fluxes of ions and light arriving at a surface of the processing object, by ray tracing; and calculating, from the fluxes of ions and light arriving at the surface of the processing object, a damage distribution of the processing object.

Damage prediction method and semiconductor processing system

Efficiency of prediction of a physical quantity increases in repeated simulation of an etching process with a change of parameters. An information processing device includes a base shape storage unit and a physical quantity prediction unit. The base shape storage unit of the information processing device stores a shape of a sample etched within a chamber as a base shape. On the other hand, the physical quantity prediction unit of the information processing device predicts a physical quantity within the chamber on the basis of a processing condition determined for the sample and associated with the physical quantity and the base shape.

Information processing device, processing device, prediction method, and processing method

Etching characteristics in a case where a workpiece contains a nitrogen compound and an etching gas such as a CHxFy-based gas contains hydrogen are obtained. In a flux calculation step, an information processing apparatus calculates a plurality of fluxes in a surface reaction model, a processed surface of a workpiece including a protection film layer and a reaction layer in the surface reaction model. In a protection film layer calculation step, the information processing apparatus calculates a thickness of the protection film layer by using a calculation equation for calculating a thickness of an etched protection film layer based on the basis of a removal term for describing removal of the protection film layer, the removal term being selected depending on a comparison result of comparing the plurality of fluxes.

Etching characteristic estimation method, program, information processing apparatus, processing apparatus, designing method, and production method

An imaging element includes a plurality of pixels that are two-dimensionally arranged and each have a light receiving part including a photoelectric conversion element and a light collecting part that collects incident light toward the light receiving part. Each of the light collecting parts in the plurality of pixels includes an optical functional layer having, in a surface, a specific projection and depression structure depending on the pixel position.

Imaging element, method for manufacturing imaging element, pixel design method, and electronic apparatus with light collecting parts having plural projection and depression structures

A plasma treatment method includes: creating a plasma from a mixed gas containing carbon and nitrogen to generate CN active species, and treating a surface of a semiconductor substrate with the CN active species.

Plasma treatment method, plasma treatment apparatus, and semiconductor device manufacturing method

A simulation method to cause an information processing device to calculate, including: reversely tracing a first flux incident on any position on a surface of a workpiece subject to processing treatment from the position; when the first flux strikes another position on the workpiece surface as a result of the reverse tracing of the first flux, calculating a second flux to be the first flux by scattering at the another position and reversely tracing the second flux from the another position; and, by repeating calculation and reverse tracing of flux, when the reversely traced flux no longer strikes the workpiece surface, carrying out comparison of the flux with an angular distribution of a flux incident on the workpiece, and when the current flux is within the angular distribution, obtaining an amount of flux having contributed to the scattering for a flux group from the first flux to the current flux.

Simulating shape of a workpiece based on a flux

A simulation method includes acquiring a processing condition for performing predetermined processing on a processing target with use of plasma, calculating a solid angle corresponding to a field-of-view region through which plasma space is viewable from a predetermined evaluation point in the predetermined evaluation point on a surface of the processing target based on the processing condition, and calculating an incident radical amount entering the evaluation point by a flux method with use of a function which takes a reaction probability between the solid angle and the evaluation point of a radical entering the evaluation point as an argument.

Simulation method, simulation program, processing apparatus, simulator, and design method

Provided is a solid-state image pickup device that includes: a plurality of pixels each including a photoelectric conversion element; and a transmittance control element provided on a light incident side of the photoelectric conversion element of at least a part of the plurality of pixels, and configured to change a transmittance of incident light by an external input.

Solid-state image pickup device with transmittance control element

A solid-state imaging element includes a semiconductor substrate where a plurality of photodiodes are arranged in a plane, and a separation section which separates the photodiodes, in which the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate.

Growing community of inventors

Kanagawa, Japan

Nobuyuki Kuboi