Nippon Sheet Glass Company, Limited

Fuji Xerox Co., Ltd.

Nobuyuki Komaba

Yukihisa Kusuda

Seiji Ohno

Takashi Tagami

Yasunori Arima

Kenjiro Hamanaka

Kenichi Nakama

Takahiro Hashimoto

Hideshi Nagata

Shuhei Tanaka

Hisao Nagata

Yasunao Kuroda

Kiyoshi Tone

Isao Muraguchi

A lens-attached light-emitting element having an improved optical availability efficiency includes a composite lens provided on an approximately U-shaped light-emitting area of the light emitting element array. Four spherical lenses are arranged in such a manner that each is centered in the neighborhood the an end of a respective one of three segments of a U-shaped polygonal line corresponding to positions where light emitted by the U-shaped light-emitting area is a maximum Three cylindrical lens are arranged between two of the spherical lens, respectively, each cylindrical lens having an axis parallel with each segment. These four spherical lenses and three cylindrical lenses together constitute the composite lens. The light-emitting element further comprises an antireflection film covering the light-emitting area, and the composite lens is formed on the surface of the antireflection film.

Lens-attached light-emitting element and method for manufacturing the same

A light demultiplexer in which a signal and a noise in each channel may be distinctly separated is provided. The light demultiplexer comprises a light-receiving element array for receiving light beams demultiplexed every wavelength from a wavelength multiplexed light beam and arranged in a straight line. The light-receiving element array includes a plurality of light-receiving elements for monitoring signals, and a plurality of light-receiving elements for monitoring noises. The light-receiving elements for monitoring signals and the light-receiving elements for monitoring noise are alternately arrayed in a straight line the direction thereof is the same as that of the arrangement of the demultiplexed light beams.

Photodetector array and optical branching filter using the array

An edge-emitting thyristor having an improved external luminous efficiency and a self-scanning light-emitting device array comprising the edge-emitting thyristor are disclosed. To improve the external luminous efficiency of an edge-emitting light-emitting thyristor, a structure where the current injected from an electrode concentrates on and near the edge of the light-emitting thyristor is adopted.

End surface light-emitting element having increased external light emission efficiency and self-scanning light-emitting element array using the same

A light-receiving element array is provided in which the degradation of characteristic thereof due to the crosstalk may be prevented. An n-InP layer, an i-InGaAs layer, and an n-InP layer are stacked on an n-InP substrate. Zn is diffused into the topmost n-InP layer to form a p-type diffused region, resulting in a pin-photodiode. A passivation layer is deposited on the structure to a thickness such that a nonreflective condition is satisfied. On the passivation film, a light-shielding film is provided so as to cover the area between light-receiving elements.

Light receiving element array having isolated pin photodiodes

A light-emitting thyristor having an improved luminous efficiency is provided. According to the light-emitting thyristor, a p-type AlGaAs layer and an n-type AlGaAs layer are alternately stacked to form a pnpn structure on a GaAs buffer layer formed on a GaAs substrate, and Al composition of the AlGaAs layer just above the GaAs buffer layer is increased in steps or continuously.

Light-emitting thyristor and self-scanning light-emitting device

The present invention provides an epitaxially grown compound semiconductor film having a low density of crystal defects which are generated during the course of crystal growth of a compound semiconductor. The present invention also provides a compound semiconductor multi-layer structure including an n-type InP substrate, an n-type InP buffer layer, an undoped InGaAs light-absorbing layer, and an n-type InP cap layer, the layers being successively grown on the substrate through MOCVD. In the InGaAs layer, the compositional ratio of In/Ga is cyclically varied in a thickness direction (cyclic intervals: 80 nm) so as to fall within a range of &plusmn;2% with respect to a predetermined compositional ratio that establishes lattice matching between InGaAs and InP; specifically, within a range between 0.54/0.46 (i.e., In Ga As) and 0.52/0.48 (i.e., In Ga As)

Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure

A self-scanning light-emitting element array using an end face light-emitting thyristor having improved external emission efficiency is provided. To improve the external emission efficiency of the end face light-emitting thyristor, the present invention adopts such structure that the current injected from an anode is concentrated to near the end face of the light-emitting thyristor. A self-scanning light-emitting element array is implemented by using such end face light-emitting thyristor.

Edge-emitting light-emitting device having improved external luminous efficiency and self-scanning light-emitting device array comprising the same

A self-scanning, light-emitting device comprises an array of cells or blocks each having a self-scanning transfer element and a light-emitting element. Turn-on state of the transfer element is transferred to the subsequent transfer element in synchronism with clock pulses. Each light-emitting element is connected to the corresponding transfer element so as to emit light upon supplying current under an ON state of the transfer element. The light-emitting array generates a light image in accordance with a light emission current.

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Osaka, Japan

Nobuyuki Komaba