National Research Institute for Metals

Japan as Represented by Director General of National Research Institute for Metals

Nobuyuki Koguchi

Toyohiro Chikyou

Shiro Tsukamoto

Katashi Masumoto

Satoshi Takahashi

Sinya Hashimoto

Keiko Ishige

Katsuyuki Watanabe

Chea Deak Lee

The present invention probides a novel method for fabricating a semiconductor super-atom and an aggregate thereof, which allows the formation of a semiconductor nano-structure with a diameter in the order of 10 nm, which is meant for constituting a core, and allows the doping of impurity atoms only to the core portion with the number of the impurity atoms being controlled. For example, droplet epitaxy is employed for the formation of the semiconductor nano-structure which constitutes the core, and scanning tunnel microscopy is employed for the doping of impurity atoms into the semiconductor nano-structure, so as to selectively introduce the impurity atoms only into the core, with the number of the impurity atoms controlled with a single-atom level accuracy

Method of making semiconductor super-atom and aggregate thereof

A STM drive mechanism capable of moving a scanning tunneling microscope (STM) incorporated with a molecular beam epitaxy (MBE) device in the MBE device under vacuum and a substrate holder with a wide clearance formed between a substrate heating system and the substrate holder are provided. The STM is protected by a heat insulating shield from high vapor pressure atmosphere and radiant heat according to substrate heating.

Crystal growth observing apparatus using a scanning tunneling microscope

A method of fabricating a semiconductor quantum box uniform in size and free from processing damages comprising the steps of adsorbing elements classified in VI family of the periodic table onto the surface of a single or multi-quantum well structure composed of semiconductors; growing crystallites of a semiconductor or a metal by liquid-drop epitaxy; applying chemical etching to the single or multi-quantum well structure with the use of the crystallites as a mask, thereby removing areas of the single or multi-quantum well structure where the crystallites haven't grown on the surface; removing the crystallites used as mask by chemical etching; and filling a semiconductor into the areas of the single or multi-quantum well structure removed in the afore step.

Method of fabricating semiconductor quantum box

A decelerating and focusing ion beam device is provided with an ion source, a focusing lens system having a plurality of focusing lenses and a multiple decelerating lens system having a plurality of decelerating lenses. It is possible to realize selective super-refined crystal growth and superficial etching with very high accuracy.

Decelerating and focusing ion beam device

A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.

Quantum effective device and process for its production

A photovoltaic converter, useful for example as a photodetector or solar cell, comprising a main unit consisting of a p-n heterojunction of a p- or n-type magnetic semiconductor MCr.sub.2 X.sub.4 in which M is Zn, Cd or Hg and X is O, S, Se or Te and an n- or p-type semiconductor M'In.sub.2 S.sub.4 in which M' is Zn, Cd or Hg and which has an optical absorption edge at a shorter wavelength than the optical absorption edge of the MCr.sub.2 X.sub.4 ; a first electrode ohmically fixed to the surface of the MCr.sub.2 X.sub.4 ; and a second electrode fixed ohmically to the surface of the M'In.sub.2 S.sub.4 and allowing light to reach the surface of M'In.sub.2 S.sub.4. With a decrease in temperature, the photovoltaic converter has the long wavelength edge of its spectral photovoltaic response shifted to a longer wavelength contrary to known photovoltaic converters.

Photovoltaic converter

An injection-type laser light emitting semiconductor device comprising a main unit in the shape of a generally rectangular parallelepiped comprising a layer of a magnetic semiconductor for emitting laser light and at least one layer of semiconductor having the same crystal structure and substantially the same lattice constant as those of the magnetic semiconductor and also having a greater optical energy gap than that of the magnetic semiconductor, both end surface of the main unit perpendicular to the coalescing surface of the two layers serving as reflecting plates for the emission of laser light, and a pair of electrodes fixed ohmically to the under surface and top surface of the main unit. This device affords laser light whose wavelength varies over a relatively wide range according to changes in the oprical energy gap of the magnetic semiconductor as a result of changing the temperature and/or applied magnetic field.

Growing community of inventors

Ibaraki, Japan

Nobuyuki Koguchi