Fujitsu Corporation

Nobuyuki Kajihara

Kenji Arinaga

Yuichiro Ito

Gen Sudo

Koji Fujiwara

Hironori Nishino

Toshio Fujii

Yusuke Matsukura

Yoshihiro Miyamoto

Kunihiro Tanikawa

Yasuhito Uchiyama

Soichiro Hikida

Kazuya Kubo

Hiroko Nakamura

Isao Tofuku

At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers are stacked.

Infrared detector

A solid-state image sensing device having a plurality of pixels each of which outputs to a transmission portion (12) a signal charge corresponding to an amount of light projected thereon. The signal charge transmitted by the transmission portion (12) is outputted as an image signal for each pixel from the solid state image sensing device. Each pixel includes a photo-diode (32), a storage portion (41) for storing charge corresponding to a current output from the photo-diode (32) onto which light is projected, a transfer portion (42) for transferring the charge stored by the storage portion to the transmission portion, and a control portion (39) for controlling an amount of charge to be received by the transmission portion based on a dark current characteristic of a corresponding photo-diode (32).

Dark current suppression for solid state image sensing device

A photoelectric transducer having a photocell includes a compound semiconductor substrate in which a photodiode is doped by an impurity of a conductivity type opposite to that of the substrate. An enclosure region is formed by the same doping impurity as the photodiode, surrounding but spaced apart from the photodiode. A gate electrode is formed on a portion of an insulation layer, the latter formed all over the substrate surface, which extends between the photodiode and the enclosure region. The enclosure region is selectively connected, via a contact hole through the insulation layer and a first switch to ground level. The gate electrode is connected via a second switch to a predetermined voltage having the same polarity as the conductivity type of the substrate. In a high-resolution mode, the first switch is closed and the second switch is open, so that the grounded enclosure region prevents carriers generated in the substrate, between the photodiode and the enclosure region, from flowing into an adjacent cell. In a high-sensitivity mode, the first switch is opened and the second switch is closed, so that the gate voltage generates a channel which electrically connects the photodiode to the enclosure region; thus, the carriers generated within the enclosure are all gathered to the photodiode. The first and second switches may be fabricated on a second semiconductor substrate, arranged parallel to but spaced from the compound semiconductor substrate and electrically connected thereto via bumps.

Photoelectric transducer switchable to a high-resolution or

A charge injection circuit for injecting a charge to a signal processing circuit has a photo-voltaic element for generating a photocurrent when an infrared light is received, a field effect transistor used for injecting the charge to the signal processing circuit, and an impedance conversion circuit for feeding back an output of the field effect transistor to a substrate potential of the photo-voltaic element. The impedance conversion circuit has a gain which is greater than zero and less than or equal to one.

Charge injection circuit having impedance conversion means

Growing community of inventors

Kawasaki, Japan

Nobuyuki Kajihara