Nec Corporation

Tdk Corporation

Denso Corporation

Tohoku University

Tokin Corporation

Nobuyuki Ishiwata

Kiyokazu Nagahara

Tsutomu Ishi

Shunsuke Fukami

Norikazu Ohshima

Tetsuhiro Suzuki

Keishi Ohashi

Kazuhiko Hayashi

Masafumi Nakada

Tamaki Toba

Kunihiko Ishihara

Yoshihiro Nonaka

Hiroaki Honjo

Junichi Fujikata

Shigeru Mori

Shinsaku Saito

Hisanao Tsuge

Mikiko Saito

Atsushi Kamijo

Haruo Urai

Kazumasa Kumagai

Hisao Matsutera

Kiyotaka Shimabayashi

Tadahiko Sugibayashi

Hideaki Numata

Shinsaku Saitho

Hiroaki Honjou

Eizo Fukami

Jun-Ichi Fujikata

Shinsaku Saitoh

Noboru Sakimura

Yuji Tsukamoto

Hiroaki Tachibana

Chizuko Wakabayashi

Hideo Ohno

Shoji Ikeda

Kaoru Mori

Takeshi Honda

Ryusuke Nebashi

Takahiro Korenari

Hironobu Tanigawa

Eiji Kariyada

Sadahiko Miura

Toshiyuki Okumura

Michihiko Yamanouchi

Yoshio Takeshima

Sinsaku Saitho

Shuichi Tahara

Kivokazu Nagahara

Yoshihino Nonaka

Masataka Konno

Mitsuo Tamura

Norikazu Oshima

A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

Magnetic memory element and magnetic memory

A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Magnetoresistive effect element and magnetic random access memory using the same

A non-volatile logic operation device includes an operation unit that is connected to a first input terminal, a second input terminal, and an output terminal, includes an operation layer, a first non-magnetic layer, and a reference layer, and outputs from the output terminal a result of a logic operation on signals applied at the first input terminal and the second input terminal, and a control unit that is connected to a third input terminal, and includes a control layer. The control unit is arranged in the vicinity of the operation unit.

Non-volatile logic operation device

A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.

A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

Magnetic random access memory

In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.

Magnetic memory device and magnetic memory

A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.

Magnetic memory and method of manufacturing the same

A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.

Magnetic memory element and magnetic random access memory

A domain wall motion type MRAM has: a magnetic recording layerbeing a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminalsandconnected to the magnetic recording layerfor supplying a current to the magnetic recording layerand an anti-ferromagnetic layerbeing in contact with a first region Rof the magnetic recording layer. The first region Rincludes a part of a current supply region RA of the magnetic recording layerthat is between the pair of current supply terminalsand

Magnetic random access memory and initializing method for the same

A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.

Magnetic memory element, magnetic memory and initializing method

An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.

Method of initializing magnetic memory element

A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.

Magnetic memory device and magnetic random access memory

A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.

Magnetoresistance element, MRAM, and initialization method for magnetoresistance element

Growing community of inventors

Tokyo, Japan

Nobuyuki Ishiwata