Nec Corporation

Renesas Electronics Corporation

Nobuyuki Ikarashi

Toru Tatsumi

Takashi Nakagawa

Haruhiko Ono

Makiko Oshida

Kensuke Takahashi

Kenzo Manabe

Masayasu Tanaka

Motofumi Saitoh

Takashi Onizawa

Heiji Watanabe

Yoshihiro Hayashi

Koji Watanabe

Kaoru Mori

Kouji Watanabe

Makoto Ueki

Tohru Mogami

Mitsuhiro Togo

Kazutoshi Shiba

Masayuki Hiroi

Toyoji Yamamoto

Kouji Masuzaki

A first nitride semiconductor layer contains Ga. The first nitride semiconductor layer is, for example, a GaN layer, an AlGaN layer, or an AlInGaN layer. Then, an aluminum oxide layer has tetra-coordinated Al atoms each surrounded by four &#x25ef; atoms and hexa-coordinated Al atoms each surrounded by six &#x25ef; atoms as Al atoms in the interface region with respect to the first nitride semiconductor layer. The interface region is a region apart, for example, by 1.5 nm or less from the interface with respect to the first nitride semiconductor layer. Then, in the interface region, the tetra-coordinated Al atoms are present by 30 at % or more and less than 50 at % based on the total number of Al atoms.

Semiconductor device and method of manufacturing the semiconductor device

A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5&#xd7;10cmor more. Defects penetrating through the defect layer form loops in the second epitaxial layer.

Semiconductor device, semiconductor substrate, method for manufacturing semiconductor device, and method for manufacturing semiconductor substrate

Semiconductor device, semiconductor substrate, method for manufacturing device, and method for manufacturing semiconductor substrate

A first nitride semiconductor layer contains Ga. The first nitride semiconductor layer is, for example, a GaN layer, an AlGaN layer, or an AlInGaN layer. Then, an aluminum oxide layer has tetra-coordinated Al atoms each surrounded by four O atoms and hexa-coordinated Al atoms each surrounded by six O atoms as Al atoms in the interface region with respect to the first nitride semiconductor layer. The interface region is a region apart, for example, by 1.5 nm or less from the interface with respect to the first nitride semiconductor layer. Then, in the interface region, the tetra-coordinated Al atoms are present by 30 at % or more and less than 50 at % based on the total number of Al atoms.

Provided is a capacitor that realizes a capacitance insulation film having a large relative permittivity and has sufficient capacitance even if an occupied space is small with a reduced amount of leakage current. A capacitor includes: a capacitance insulation film; and an upper electrode and lower electrode each formed on both sides of the capacitance insulation film. The capacitance insulation film is a complex oxide whose main ingredients are Zr, Al and O with the composition ratio of Zr to Al being set at (1&#x2212;x): x (0.01&#x2266;x&#x2266;0.15) and is composed of a dielectric substance having a crystal structure. The lower electrode is composed of a conductor whose surface contiguous to at least the dielectric film has an amorphous structure.

Capacitor, semiconductor device having the same, and method of producing them

To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1&#x2212;x):x where 0.01&#x2266;x&#x2266;0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced.

Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric

A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.

Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer

According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating filmformed on a semiconductor layerand a gate electrodeformed on the gate insulating film. The gate insulating filmhas a silicon oxide film including a metal elementand nitrogen, and characteristics of the silicon oxide film are modified by adding the metal elementand nitrogen. Respective concentration distributions of the metal elementand nitrogenin the gate insulating filmhave maximum values on an interface side between the gate insulating filmand the gate electrode, and gradually decrease toward the semiconductor layer

Semiconductor device

There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi(0&#x3c;X&#x3c;1), as a primary constituent. X is greater than 0.5 (X&#x3e;0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X&#x2266;0.5) in a n-type MOSFET.

Semiconductor device with silicide-containing gate electrode and method of fabricating the same

A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device.

Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device

A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness direction than in an upper portion and in a lower portion.

Semiconductor device with high dielectric constant insulating film and manufacturing method for the same

[Problems] To provide a semiconductor device including a MIS-type FET having an excellent characteristic of low leakage current despite use of a high-K material of a high dielectric constant in a gate insulating film. [Means for solving Problems] A MIS-type field-effect-transistor (FET) including: a silicon substrate (); an insulating film () formed on the silicon substrate and containing silicon and at least one of nitrogen and oxygen; a metal oxide film formed on the insulating film and containing silicon and hafnium; and a gate electrode formed on the metal oxide film, wherein a silicon molar ratio (Si/(Si+Hf)) in the meal oxide film is in the range of 2 to 15%.

Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film

Semiconductor device having high-permittivity insulation film and production method therefor

A MIS transistor has a gate insulating film made of silicon oxynitride and having a specific dielectric constant which is larger than the expected specific dielectric constant calculated based on a weighted average of the specific dielectric constants based on the weight ratio of the silicon oxide and the silicon nitride contained in the silicon oxynitride film. The gate insulating film having a smaller thickness prevents impurities in the overlying gate electrode from penetrating through the gate insulating film to degrade the silicon substrate.

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Tokyo, Japan

Nobuyuki Ikarashi