Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Nobuyuki Horikawa

Masao Uchida

Hiroyuki Furuya

Koichi Kusukame

Tomoya Sugita

Kazuhisa Yamamoto

Tetsuro Mizushima

Osamu Kusumoto

Kiminori Mizuuchi

Shinichi Kadowaki

Atsushi Ohoka

Shinichi Shikii

Tsutomu Kiyosawa

Masashi Hayashi

Koutarou Tanaka

Tatsuo Itoh

Takashi Hasegawa

Kenji Nakayama

Akihiro Morikawa

Masahiko Niwayama

Yasuyuki Yanase

Toshifumi Yokoyama

Kazuhiro Kagawa

A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer. Thus, breakdown of the insulating film in the gate region can be prevented without causing deterioration in quality of the gate insulating film, upon switching and avalanche breakdown.

Silicon carbide semiconductor device

A silicon carbide semiconductor device includes an upper gate electrode including a gate pad and a gate wiring line, and an upper source electrode including first and second source pads. The gate wiring line includes a gate global wiring line extending to encircle the source pads, and a gate connection wiring line. The upper source electrode includes an outer periphery source wiring line extending to encircle the gate global wiring line, and first and second source connections connecting the outer periphery source wiring line to the first and second source pads, respectively. The gate global wiring line includes a first portion, a second portion, and a third portion. The first portion is split at a first substrate corner and a second substrate corner and lies between the first substrate corner and the second substrate corner.

The silicon carbide semiconductor device includes a plurality of unit cells each having an MISFET structure and provided on a silicon carbide semiconductor substrate. A gate upper electrode disposed adjacent to the plurality of unit cells includes a gate pad and gate global wires. When viewed in plan, gate electrodes do not overlap with the gate pad.

In the silicon carbide semiconductor element, a second silicon carbide semiconductor layer that is in contact with the surface of a first silicon carbide semiconductor layer has at least an upper layer including a dopant of a first conductivity type at a high concentration. Above a junction field effect transistor (JFET) region interposed between body regions that are disposed in the first silicon carbide semiconductor layer so as to be spaced from each other, the silicon carbide semiconductor element has a channel removed region, which is a cutout formed by removing a high concentration layer from the front surface side of the second silicon carbide semiconductor layer, the high concentration layer having a higher dopant concentration than at least the dopant concentration of the JFET region. The width of the channel removed region is smaller than that of the JFET region.

Silicon carbide semiconductor element and method for manufacturing the same

A semiconductor device includes a first silicon carbide semiconductor layer, a source including a source pad and a source wiring, a gate including a gate pad and a gate wiring, first unit cells disposed in a first element region, and second unit cells disposed in a second element region. In a plan view, the first and second element regions are adjacent to each other with the gate wiring between the first and second element regions. A first electrode including the gate electrode of each first unit cell is disposed in the first element region and electrically connected to the gate. A second electrode including the gate electrode of each second unit cell is disposed in the second element region and not electrically connected to the gate. The first and second electrodes are separated below the gate wiring.

Semiconductor device including semiconductor substrate, silicon carbide semiconductor layer, unit cells, source, and gate

A semiconductor device includes a first silicon carbide semiconductor layer of a first conductive type that is positioned on a front surface of a substrate of the first conductive type, a transistor region that includes transistor cells, a Schottky region, and a boundary region. The boundary region includes a second body region and a gate connector that is arranged on the second body region via an insulating film and electrically connected with a gate electrode. The Schottky region includes a Schottky electrode that is arranged on the first silicon carbide semiconductor layer.

Semiconductor device and manufacturing method thereof

A wavelength conversion laser light source, includes: a solid laser medium; a wavelength conversion element; a concave mirror on which a first reflecting surface reflecting a fundamental light wave and a the second harmonic light wave is formed; and a wavelength plate on which a second reflecting surface reflecting the fundamental light wave and transmitting the second harmonic light wave is formed, wherein a laser resonator is constituted by the first reflecting surface and the second reflecting surface; the solid laser medium is arranged on a first reflecting surface side of the laser resonator, the wavelength plate is arranged on a second reflecting surface side of the laser resonator, and the wavelength conversion element is arranged between the solid laser medium and the wavelength plate; and the wavelength plate outputs the second harmonic wave, to the exterior of the laser resonator, via the second reflecting surface.

Wavelength conversion laser light source, and image display device

A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a second region provided in the first region, a second silicon carbide semiconductor layer provided on and in contact with the first silicon carbide semiconductor layer, a first ohmic electrode in ohmic contact with the second region, and an insulating film provided on the second silicon carbide semiconductor layer. The first cell includes a gate electrode, and the second cell includes no electrode configured to control the electric potential of the second silicon carbide semiconductor layer independently of the electric potential of the first ohmic electrode.

Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer

In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The impurity concentration of the first body region is twice or more the impurity concentration of the second body region. A second silicon carbide semiconductor layer of a first conductivity type, which is a channel layer, has an impurity concentration distribution in a direction perpendicular to a semiconductor substrate, and an impurity concentration on a side in contact with the gate insulating film is lower than an impurity concentration on a side in contact with the first body region.

Semiconductor element

A semiconductor layerhaving a drift region, a body region, and a source regionprovided at a position next to the body region; an epitaxial layerin contact with the body region; and a gate insulating filmprovided on the epitaxial layer are formed on a principal surface of a semiconductor substrate. The epitaxial layer includes an interface epitaxial layerin contact with the body region, a first epitaxial layeron the interface epitaxial layer, and a second epitaxial layeron the first epitaxial layer. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.

Semiconductor device which can withstand high voltage or high current and method for fabricating the same

A wavelength conversion laser light sourcehas: a laser light source configured to generate fundamental wave laser light; and a wavelength conversion elementprovided with a periodic polarization reversal structure configured to convert the fundamental wave laser light which is incident onto the periodic polarization reversal structure into different laser light in wavelength wherein the wavelength conversion element includes different polarization reversal regions in period; and a polarization reversal axisof at least one of the polarization reversal regions is inclined with respect to an incident optical path of the fundamental wave laser light on the wavelength conversion element.

Wavelength conversion laser light source and image display apparatus

A laser light source includes a fundamental laser generator that generates a fundamental laser light, a wavelength conversion element that is made of a ferroelectric crystal with a periodically poled structure and converts the fundamental laser light to a laser light having a different wavelength, a holding member that holds at least a part of an element surface of the wavelength conversion element that crosses a polarization direction of the periodically poled structure, and an insulation layer that is provided between the holding member and the element surface. Electric resistivity of the insulation layer is 1&#xd7;10&#x3a9;&#xb7;cm or higher.

Laser light source, image display apparatus, and processing apparatus

A laser light source having a semiconductor laser light source which emits a laser beam, a laser medium excited by the semiconductor laser light source to emit light, two reflectors configured to work as a resonator to confine the light emitted by the laser medium, and a holder which holds the laser medium, wherein stress is generated in the laser medium formed of a ceramic material situated in the resonator so as to control a polarization direction of the light emitted by the laser medium.

Laser light source, wavelength conversion laser light source and image display device

A wavelength conversion laser light source having: a laser medium which generates a fundamental wave light; a laser resonator for causing laser oscillation of the fundamental wave light; a wavelength convertor which is provided with a wavelength converting region to convert the fundamental wave light under the laser oscillation by means of the laser resonator into converted light of a different wavelength; and an excitation laser light source for exciting the laser medium, wherein the laser resonator has at least one reflecting surface which reflects the fundamental wave, and a first reflecting element which is provided on an end surface of the wavelength convertor to reflect the fundamental wave light; the wavelength converting region is situated between the at least one reflecting surface and the first reflecting element; the wavelength convertor has a periodic first polarization reversal structure formed in the wavelength converting region, and a non-converting region formed between the first reflecting element and the wavelength converting region; and the non-converting region does not convert the fundamental wave light into the converted light.

Growing community of inventors

Kyoto, Japan

Nobuyuki Horikawa