Sharp Kabushiki Kaisha Corporation

Nobuyuki Ashida

Kunihiko Iizuka

Takeshi Mitsunaka

Akira Saito

Shigenari Taguchi

Takahiro Shindoh

Masahiro Shiota

Isao Nakamura

Seiichi Hama

There is provided an impedance sensor capable of counting the number of microscopic biological materials and specifying their properties stably with high sensitivity. An impedance sensor includes a measuring electrode pair formed at a wiring layer in a multilayer-wiring circuit board and one or more dielectrophoresis electrodes formed at another wiring layer lower than the wiring layer.

Sensor array

[Object] To achieve a radiation detector capable of suppressing variation in the amount of radiation detected. [Solution] A first gate electrode () is connected to a light receiving device, and a second gate electrode () is configured to have the same potential as that of the first gate electrode ().

Radiation detector

An integrated circuit sensor that enables, regardless of a type of an inspection object, the inspection object and a front surface of the integrated circuit sensor to be in reliable contact with each other in a large region is provided. A through silicon via () that electrically connects an inside of an integrated circuit sensor () and an outside of the integrated circuit sensor () is formed in the inside of the integrated circuit sensor () so as to reach a rear surface of the integrated circuit sensor (), which faces the front surface of the integrated circuit sensor ().

Integrated circuit sensor and sensor substrate

[Object] To achieve a high-sensitivity radiation detector. [Solution] An amplifying transistor () is configured such that a photodiode () receives light with the amplifying transistor () conductive.

An imaging system includes an input voltage setting unit that applies an input voltage to an Amp transistor, a setting output value acquisition unit that acquires a corresponding output for each pixel, and a calibration characteristic deriving unit that derives an input-output characteristic indicating a correspondence relationship between the input voltage and the output and derives a calibration characteristic to be used for calibration based on an inverse characteristic of the input-output characteristic.

Imaging system, control method of imaging system, and storage medium

A change in an imaginary part of a complex dielectric constant of an inspection object containing moisture is detected as a change in an oscillation frequency. A sensor device includes an oscillation unit that is formed in a semiconductor integrated circuit and an oscillation frequency detection unit that detects an oscillation frequency of the oscillation unit. The oscillation unit has capacitors that are connected to an inspection object in series and changes the oscillation frequency in accordance with a complex dielectric constant of the inspection object.

Sensor device

Provided is a technology for detecting a change in an inspection target containing moisture. A sensor circuit () for inspecting property of an inspection target includes an oscillator () having a resonance frequency of 30 to 200 GHz, and a detection circuit () that estimates an oscillation frequency of the oscillator.

Sensor circuit

To detect changes in the physical properties of an examination object as changes in a plurality of different oscillation frequencies using signals with the oscillation frequencies, a sensor circuit includes: an oscillation circuit () with a first resonant frequency; an oscillation circuit () with a second resonant frequency different from the first resonant frequency; and a detection circuit () that detects oscillation frequencies of the oscillation circuit () and the oscillation circuit ().

The 90-degree phase shifter of the invention has: a T flip-flop including transistors Qto Qand Qto Qthat together constitute a dual differential circuit, input transistors Qand Qthat receive at their bases an input signal, and input transistors Qand Qthat receive at their bases a signal complementary to the input signal; variable current sourcestoconnected respectively to the nodes between the individual input transistors and the dual differential circuit; and a 90-degree phase comparatorthat compares the phase differences between the signals outputted from the T flip-flop to output signals commensurate with the deviations of those phase differences from 90 degrees. The variable current sourcestoare controlled by signals based on the signals outputted from the 90-degree phase comparator. This configuration more surely yields output signals with a phase difference of exactly 90 degrees.

90-degree phase shifter

A front-end IC is so structured that an RF circuit section and a digital demodulating circuit section are integrated in one package therein. The RF circuit section has an RF circuit section and a base band variable gain amplifier. The digital demodulating circuit section has an amplification rate control circuit. The front-end IC is also provided with an AGC signal input switch for switching between (a) inputting an internal signal, via an AGC loop, into the RF circuit section in the RF circuit section and the base band variable gain amplifier, and (b) directly supplying a test-use AGC signal, by opening the AGC loop, into the RF circuit section in the RF circuit section and the base band variable gain amplifier. The internal signal is outputted from the digital demodulating circuit section. The AGC signal input switch is switched over in accordance with an AGC signal input switching signal TEST. With this arrangement, it is possible to provide an IC in which a test of amplification rate property of the variable gain amplifier included in the RF circuit, and other tests of the RF circuit can be performed easily.

Growing community of inventors

Sakai, Japan

Nobuyuki Ashida