Nippondenso Co., Ltd.

Nippon Soken, Inc.

Denso Corporation

Advanced Mobile Telecommunication Technology Inc.

Cryodevice Inc.

Nobuyoshi Sakakibara

Tadashi Hattori

Akira Fukami

Teiichi Nabeta

Hiroki Noguchi

Kenichirou Kami

Tetsuo Fujii

Kazuhiko Miura

Toshio Sakakibara

Seizi Huzino

Hidehiko Hiramatsu

Norikazu Adachi

Mitutaka Katada

Takayuki Tominaga

Minoru Ohta

Toshiyuki Kawai

Hiroshi Iwasaki

Naohito Mizuno

Toshiki Kobayashi

Fumio Ohara

Yoshitaka Gotoh

Michio Hisanaga

Hiroki Hoshizaki

Kan Kitagawa

Tomonori Fujinaka

Kazunori Kawamoto

Yoshiki Ueno

Mitsunari Okazaki

A gas separator has an adsorbent, a circulation-passage constituting member, a circulator, an adsorption facilitator, and a desorption facilitator. The adsorbent adsorbs or desorbs carbon dioxide, and the adsorbent is made of a liquid. The circulation-passage constituting member therein has a space that defines a circulation passage in which the adsorbent flows. The circulator circulates the adsorbent in the space. The adsorption facilitator facilitates an adsorption of carbon dioxide to the adsorbent filling the space. The desorption facilitator facilitates a desorption of carbon dioxide from the adsorbent filling the space.

Gas separator and battery system having the same

A magnetic refrigeration material includes an alloy represented by a composition formula of La(Fe, Si)H, and the alloy includes &#x3b1;-Fe by a weight ratio lower than 1 wt % and a plurality of pores so that a packing fraction of the alloy is within a range from 85% to 99%.

Magnetic refrigeration material and manufacturing method of magnetic refrigeration material

A surface treating method of a negative electrode for a magnesium secondary battery is provided, wherein the magnesium secondary battery includes: a negative electrode capable of releasing magnesium ions during discharging and capable of precipitating elemental magnesium during charging; a positive electrode capable of precipitating a magnesium oxide during the discharging and capable of releasing magnesium ions during the charging; and a non-aqueous ion conductor for conducting magnesium ions as conduction species. The surface treating method comprises initializing the negative electrode by performing the discharging to form a bare surface at a surface of the negative electrode.

Surface treating method of negative electrode for magnesium secondary battery, negative electrode for magnesium secondary battery, and magnesium secondary battery

A magnesium secondary battery includes: a negative electrode for adsorbing and releasing a magnesium ion; a positive electrode for producing a magnesium oxide product in a discharging process; and a non-aqueous magnesium ion conductor disposed between the negative electrode and the positive electrode. The positive electrode includes an accelerator for promoting the magnesium oxide product, which is decomposed to a magnesium ion and an oxygen molecule easier than MgO. In this case, since the electrochemical reaction at the positive electrode in a charging process rapidly progresses, the magnesium secondary battery can charge and discharge repeatedly. Thus, the battery functions as a secondary battery sufficiently.

Magnesium secondary battery

A filter device includes a super-conducting type filters connected in series with each other and is accommodated in a vacuum chamber. Operating temperatures of the filters are controlled to different temperatures from the outside of the vacuum chamber independently of each other. Each filter varies its filtering characteristics, particularly its central frequency of pass-band, in correspondence with the operating temperature, while maintaining the same pass-band width. As the filters operated at the different operating temperatures provide different filtering characteristics, the combined or resulting filtering characteristics of the filtering device can be adjusted as desired even after the filtering device is installed at a mobile telecommunication base station.

Filter device having independently adjustable filtering characteristics and method of adjusting central frequency of the same

Herein disclosed is a method for depositing a high Tc superconducting thin film. The superconducting thin film is deposited on one surface of a substrate. The substrate is exposed to an electromagnetic wave to heat the substrate during the process for depositing the superconducting thin film. Before the processes for depositing the superconducting thin film and exposing the substrate to the electromagnetic wave, a dummy film is formed on the other surface of the substrate. The dummy film has absorbency of the electromagnetic wave which is higher than that of the substrate. The dummy film together with the substrate is exposed to the electromagnetic wave while the superconducting thin film is deposited on the one surface of the substrate. The superconducting thin film thus deposited has superconductivity and high quality crystal structure.

High temperature superconducting thin film deposition method

A superconducting oxide thin film device is composed of a LaAlO.sub.3 substrate and a YBCO thin film with a BaCeO.sub.3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the buffer layer. The buffer layer also inhibits peeling of the film from the substrate and diffusion of Ba from the film into the substrate.

Superconducting oxide thin film device

A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece. Reaction products of the workpiece and reactive gas produced by the etching adhere to and deposit on the sidewall of the trench and form a protective film for protecting the sidewall from being etched, thereby providing the trench with a high aspect ratio.

Fine structure forming device

Semiconductor chips are mounted in a supporting semiconductor substrate, with matching anisotropic (crystal plane) faces on the chips and substrate. The chips may extend above the substrate to facilitate connection together.

Crystal-etched matching faces on semiconductor chip and supporting

A first polysilicon film serving as an erase gate is deposited on the major surface of a semiconductor substrate on which a field oxide film is formed, so that the surface of the first polysilicon film is roughened. The surface of the first polysilicon film is thermally oxidized to form a first thermal oxide film thereon. During the oxidation, the roughened surface of the first polysilicon film is flattened, and is duplicated by the surface of the first thermal oxide film. A second polysilicon film is deposited on the roughened surface of the first thermal oxide film. The back surface of the second polysilicon film is roughened by the roughened surface of the first thermal oxide film. In this case, the surface of the second polysilicon film is also roughened. The roughened surface of the second polysilicon film is thermally oxidized in the same manner as described above to flatten its surface and to form a second thermal oxide film, the surface of which is roughened. A third polysilicon film serving as a write gate is formed on the second thermal oxide film.

Method of making a nonvolatile semiconductor memory apparatus with a

In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.

Polycrystalline silicon active layer for good carrier mobility

In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically from each other. A plurality of semiconductor intermetallic compound layers used as electrodes are formed independently in the same spaced relationship as the semiconductor elements for the respective semiconductor elements, making it possible to determine the potential for each semiconductor element as desired. Both N-type DMOS and P-type DMOS or the like can thus be formed on a single seminconductor single crystal substrate.

Semiconductor device

A non-volatile semiconductor memory device comprises a semiconductor substrate of a first conduction type, an impurity buried layer of a second conduction type formed at the surface of the semiconductor substrate for constituting either one of a drain region or a source region, an epitaxial layer of a second conduction type formed at the surface of said impurity buried layer, an insulatiang partition wall extended vertically from the surface of the epitaxial layer surrounding operation regions in the impurity buried layer for defining the operation regions therein, at least one electron holding portion extended vertically with a predetermined distance from the operation regions and disposed within the insulating partition wall apart from the operation region, the impurity buried layer or the drain region by an insulation film of such a thickness as causing a tunnel effect, control gates disposed within the insulation partition wall disposed on every electron holding portions on the side opposite to the operation regions and extended vertically with a certain gap from the electron maintaining portions, and a control gate disposed within the insulating partition wall on every electron holding portions on the opposite side to the operation region extended vertically and with a certain gap to the electron holding portions, and an impurity region of a second conduction type formed at the surface of the operation region for constituting the other of the drain region or the source region.

Non-volatile semiconductor memory device

An air cleaner using an ionic wind having discharge electrodes, a counter electrode arranged downstream of the discharge electrodes, and first and second parallel plate electrodes arranged alternately downstream of the counter electrode. The second parallel plate electrodes are connected to a potential pick-up electrode arranged in the vicinity of the discharge electrodes. The first and second parallel plate electrodes which are arranged alternately serve as dust collecting electrodes.

Air cleaner using ionic wind

An air cleaning apparatus having an electrical dust collecting section has discharge electrodes, electrical field forming electrodes arranged parallel to the flow of charged particles, and dust collecting electrodes each of which is arranged between corresponding two adjacent electrical field forming electrodes to be parallel thereto. One high voltage power source is arranged to generate a potential difference between the discharge electrodes and the dust collecting electrodes. Another high voltage power source is arranged to generate a potential difference between the electrical field forming electrodes and the dust collecting electrodes. Negative electrodes consisting of either the electrical field forming electrodes or the dust collecting electrodes are covered by insulator members.

Growing community of inventors

Nishio, Japan

Nobuyoshi Sakakibara