Kabushiki Kaisha Toshiba

Nobuyoshi Nara

Kenichi Imamiya

Tetsuya Murakami

A nonvolatile memory device includes a nonvolatile memory and a controller unit for the nonvolatile memory. The nonvolatile memory and the controller unit include a first logic section and a second logic section, respectively. The nonvolatile memory includes a voltage detector configured to detect a power supply voltage externally supplied to the nonvolatile memory and the controller unit, and an output of the detection is supplied to the first logic section of the nonvolatile memory provided with the voltage detector, and also to the second logic section of the controller unit and/or a logic section of at least one added nonvolatile memory via a buffer amplifier, simultaneously.

Nonvolatile memory device

A semiconductor device includes a first circuit which operates in accordance with an internal clock, a second circuit which generates information of which an external apparatus is to be notified, an interface section which notifies the external apparatus of the information generated by the second circuit without using the first circuit upon receiving a predetermined command from the external apparatus, and a plurality of terminals each of which is connectable to one of power terminals and ground terminals provided on a substrate. The information is determined depending on whether each of the plurality of terminals is electrically connected to the power terminal or ground terminal on the substrate.

Growing community of inventors

Kawasaki, Japan

Nobuyoshi Nara