Renesas Electronics Corporation

Renesas Technology Corp.

Renesas Electronics America Inc.

Upi Semiconductor Corporation

Renesas Technology America, Inc.

Nobuyoshi Matsuura

Masaki Shiraishi

Tomoaki Uno

Nobuyuki Shirai

Yukihiro Satou

Tetsuya Kawashima

Yoshito Nakazawa

Noboru Akiyama

Takayuki Hashimoto

Yukihiro Sato

Tetsuo Sato

Toshio Nagasawa

Kisho Ashida

Takayuki Iwasaki

Keiichi Okawa

Kozo Sakamoto

Hirokazu Kato

Masashi Koyano

Hideo Miura

Masaharu Kubo

Takashi Hirao

Hideo Ishii

Yasuhiko Kouno

Kyouichi Takagawa

Masamichi Yanagida

Koji Tateno

Yohihiro Satou

Hiroki Arai

The present invention provides a semiconductor device that can achieve miniaturization or thinning of the size of the package while maintaining the characteristic of the MOSFET and reducing the on-resistance value, and a portable apparatus using the same. The gate electrodesandof the semiconductor chipare disposed in the vicinity of the two side surfaces of the longitudinal direction (the x axis direction on the page) of the package, and the gate terminalandthat is mounted with the gate electrodesandin a flip-chip manner are extended in the longitudinal direction of the packageand are derived to the outside from the two side surfacesA andB. Based on the configuration, it is capable of maximizing the size of the semiconductor chip with respect to the size of the package, and it is able to realize the high performance of the element characteristic for the module.

Semiconductor device and portable apparatus using the same

A semiconductor device manufacturing method is disclosed. The semiconductor device manufacturing method includes: a preparation step of preparing a semiconductor wafer; a removal step of removing a thickness part of the semiconductor wafer; and a cutting step of cutting the semiconductor wafer. In the removal step, a rib-shaped portion partially raised on a second main surface of the semiconductor wafer is used as an alignment mark, so that a cutter can align with the semiconductor wafer.

Semiconductor device, semiconductor wafer and semiconductor device manufacturing method

In a non-insulated DC-DC converter having a circuit in which a power MOS&#x22c5;FET high-side switch and a power MOS&#x22c5;FET low-side switch are connected in series, the power MOS&#x22c5;FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS&#x22c5;FET low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chip, and on both sides thereof, the formation regions of the power MOS&#x22c5;FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.

Semiconductor device with first and second chips and connections thereof and a manufacturing method of the same

A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.

Trench MOSFET having an independent coupled element in a trench

In a non-insulated DC-DC converter having a circuit in which a power MOS&#x2022;FET high-side switch and a power MOS&#x2022;FET low-side switch are connected in series, the power MOS&#x2022;FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS&#x2022;FET low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chip, and on both sides thereof, the formation regions of the power MOS&#x2022;FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.

Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same

A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.

Semiconductor device

The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS&#x2022;FET for a high side switch and a power MOS&#x2022;FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Semiconductor device including a DC-DC converter

Semiconductor device including DC-DC converter

A semiconductor device has a MOSFET and a Schottky barrier diode. A source electrode of the MOSFET is disposed over a main surface of the semiconductor substrate and is coupled to a source region in a well region of the semiconductor substrate. The Schottky barrier diode is adjacent to the MOSFET and includes a part of the source electrode and a part of the main surface of the semiconductor substrate.

Semiconductor device including a MOSFET

A semiconductor device has a semiconductor substrate with a plurality of transistor cell regions. Each transistor cell region includes a plurality of trenches disposed in the semiconductor substrate, a well region between the plurality of trenches, and a source region of a MOSFET in the well region. A source electrode of the MOSFET is in contact with a top surface of the source region in each of the plurality of transistor cell regions. The source electrode is in contact with a part of a main surface of the semiconductor substrate so as to form a Schottky junction in a Schottky cell region disposed between the plurality of transistor cell regions. The Schottky junction is lower than a portion of the main surface between the Schottky junction and one of the transistor cell regions.

Semiconductor device including a MOSFET and Schottky junction

The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m&#xd7;parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

Semiconductor device, LED driving circuit, and apparatus for displaying an image

A semiconductor device which includes a gate electrode electrically connected to a gate portion made of a polysilicon film provided inside of a plurality of grooves formed in a striped form along a direction of a chip region. The gate electrode is formed as a film at the same layer level as a source electrode electrically connected to a source region formed between adjacent stripe-shaped grooves. The gate electrode is constituted of a gate electrode portion formed along a periphery of the chip region and a gate finger portion arranged to divide the chip region into halves. The source electrode is constituted of an upper portion and a lower portion relative to the gate finger portion, and the gate electrode and the source electrode are connected to a lead frame via a bump electrode.

Growing community of inventors

Takasaki, Japan

Nobuyoshi Matsuura