Anelva Corporation

Nobuyoki Takahashi

Masahiko Kobayashi

Shigeru Mizuno

Yoshihiro Katsumata

Takanori Yoshimura

A process for forming a thin film by chemical vapor deposition which comprises repeating a substrate processing step on one or more substrates placed inside a reaction chamber by introducing a reaction gas inside the reaction chamber. The process includes a step of introducing a passivation gas or the like for passivating the surface of a thin film deposited on the fixing jig or other peripheral members between substrate processing steps. The passivation gas is, for example, an adsorbent gas or an oxidizing gas. More specifically, an example of an adsorbent gas is a mixture of an inert gas and from 0.1 to 10% of NH.sub.3 gas or SiH.sub.2 Cl.sub.2 gas, and an example of an oxidizing gas is a mixture of an inert gas and at least one selected from the group of oxygen, nitrogen, monoxide, and nitrogen dioxide. The inert gas may also be replaced with N.sub.2 gas.

Process for preventing deposition on inner surfaces of CVD reactor

A method for forming Ti--TiN laminates adapted to reduce the formation of dust particles harmful to semiconductor devices without detriment to productivity, and a magnetron cathode for performing the method are provided. Ti films and TiN films are formed through sputtering of a Ti target using a multi-chamber system comprising at least two chambers each having a magnetron cathode in which a magnet can be moved to accommodate different films. The type of film being formed in each chamber is periodically alternated to prevent a buildup of TiN film adhered to the inner walls of the chambers which peels and causes dust particles.

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Fuchu, Japan

Nobuyoki Takahashi