Pioneer Electronic Corporation

Pioneer Corporation

Hamamatsu-Photonics K.k.

Nippon Hoso' Kyokai

Futaba Corporation

Nobuyasu Negishi

Takamasa Yoshikawa

Kiyohide Ogasawara

Takashi Chuman

Shingo Iwasaki

Takashi Yamada

Atsushi Yoshizawa

Hiroshi Ito

Kazuto Sakemura

Hideo Satoh

Takuya Hata

Shuuichi Yanagisawa

Yoshiyuki Okuda

Nobuaki Onagi

Masataka Yamaguchi

Shigeo Itoh

Yuki Honda

Atsushi Watanabe

Yoshiro Takiguchi

Masateru Taniguchi

Kazuhito Nakamura

Satoshi Jinno

Takahiro Kobayashi

Akira Kobayashi

Norifumi Egami

Seiro Fujii

Kenta Miya

Masakazu Namba

Yoshiyuki Hirano

Toshihisa Watabe

Katsumi Yoshizawa

Saburo Okazaki

Shinichiro Suzuki

Masayasu Yamaguchi, Deceased

Ryota Tanaka

Tomonari Nakada

Saburo Aso

Shuuchi Yanagisawa

An electron emitting device includes an amorphous electron supply layer, an insulating layer formed on the electron supply layer, and an electrode formed on the insulating layer. The electron emits device emitting electrons when an electric field is applied between the electron supply layer and the electrode. The electron emitting device includes a concave portion provided by notching the electrode and the insulating layer to expose the electron supply layer, and a carbon layer covering the electrode and the concave portion except for an inner portion of an exposed surfaceof the electron supply layer and being in contact with an edge portion of the exposed surface of the electron supply layer.

Electron emitting device, display apparatus using electron emitting device, and method of manufacturing electron emitting device

Provided is a method of driving an electron emission apparatus that drives the apparatus including a plurality of electron emission devices each having an electron supply layer formed of silicon, a silicon-based mixture or a compound thereof, an insulator layer formed on the electron supply layer and a thin film metal electrode formed on the insulator layer. The plurality of electron emission devices are sealed and the method includes: a driving step for supplying power between the electron supply layer and the thin film metal electrode to cause electrons to be emitted from the electron emission device and a reactivating step for applying a reactivating voltage at a level equal to or higher than an applied voltage value which causes discontinuity in differential value of the device current flowing between the electron supply layer and the thin film metal electrode with respect to the applied voltage.

Electron emission device, and driving method thereof

An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to cause the electron sources included in unselected one or more horizontal scan lines not selected in the given video signal output period to emit electrons toward the photoelectric conversion film in a blanking period immediately preceding the given video signal output period.

Imaging apparatus having electron source array that emits electrons during a blanking period

Disclosed is an image pickup device capable of greatly reducing delay in drive signals supplied to field emission devices, and cross-talk and the like that originate in these drive signals. The image pickup device comprises a photoelectric conversion film for receiving incident light on one side thereof; a field emission layer having an electron emitting surface apart from and facing the other side of the photoelectric conversion film, and including a plurality of electron emission devices; and a drive layer formed on a back side of the field emission layer and including a plurality of device drive circuits for supplying drive signals to each of back electrodes of the plurality of electron emission devices.

Photoelectric conversion device and image pickup device using electron emission devices

An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.

Electron-emitting device and method of manufacturing the same and display apparatus using the same

A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.

Display device of flat panel structure with emission devices of matrix array

An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer deposited over an electron source layer formed over an ohmic electrode; and a metal thin film electrode deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.

Image pickup device including electron-emitting devices

A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.

Flat panel display device utilizing electron emission devices

An electron emission light-emitting device comprises an electron emission device and a fluorescent material layer formed on the thin-film metal. The electron emission device comprises an electron-supply layer made of semiconductor formed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron emission light-emitting device emits light when an electric field is applied between the electron-supply layer and the thin-film metal.

Electron emission light-emitting device and display apparatus using the same

An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer has a rectifier function layer, whereby the electron emission device emits electrons when an electric field is applied between the electron-supply layer and the thin-film metal.

Electron emission device and display apparatus using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of a silicon wafer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Electron emission device and display device using the same

An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.

Electron emission device with electron supply layer having reduced resistance

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

An electron emission device includes an electron-supply layer formed of metal or semiconductor; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer, whereby electrons are emitted when an electric field is applied between the electron-supply layer and the thin-film metal electrode. The insulator layer and the thin-film metal electrode have at least one island-like region where the thicknesses of the insulator layer and the thin-film metal electrode gradually decrease.

Electron emission device with specific island-like regions

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 &mgr;m or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Growing community of inventors

Tsurugashima, Japan

Nobuyasu Negishi